Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes

Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

  Jowikowski K ^a   Kopytko, M ^a   Rogalski, A ^a   Jowikowska A ^b  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b WARSAW UNIVERSITY OF LIFE SCIENCES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; BAND TO BAND TUNNELING; COMPUTER PROGRAM; CONTINUITY EQUATIONS; DARK CURRENT-VOLTAGE; DEPLETION REGION; EXPERIMENTAL DATA; GENERATION-RECOMBINATION; HGCDTE PHOTODIODES; IDEAL DIODES; LONG-WAVELENGTH INFRARED; POTENTIAL BARRIERS; THEORETICAL PREDICTION; TRAP ASSISTED TUNNELING; TUNNELING PROBABILITIES;

IMPACT IONIZATION; INFRARED RADIATION; IONIZATION POTENTIAL; MERCURY (METAL); MERCURY COMPOUNDS; NONLINEAR EQUATIONS; NUMERICAL ANALYSIS; PHOTODIODES; POISSON EQUATION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77958169108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483926     Document Type: Article

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