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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Atomistic simulation of plasticity in silicon nanowires

(4) Cleri, Fabrizio a Ishida, Tadashi b Collard, Dominique b,c Fujita, Hiroyuki b

a INSTITUT D ELECTRONIQUE (France)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; ATOMISTIC SIMULATIONS; CONSTANT STRESS; MOLECULAR DYNAMICS SIMULATIONS; POLYCRYSTALLINE-SI; SILICON NANOWIRES; TENSILE DEFORMATION; THIN LAYERS;

MOLECULAR DYNAMICS; NANOCRYSTALS; NANOWIRES; POLYSILICON;

AMORPHOUS SILICON;

EID: 77958081788 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3501987 Document Type: Article

Times cited : (9)

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