Proposal of a new physical model for Ohmic contacts

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2837-2840

  Takada, Y ^a   Muraguchi, M ^b   Endoh, T ^b   Nomura, S ^a   Shiraishi, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Ohmic contacts; Two dimensional electron system

Indexed keywords

CHARGE NEUTRALITY LEVEL; DEFECT ENERGY LEVEL; DEVICE APPLICATION; ENERGY RANGES; FUNDAMENTAL PHYSICS; IV CHARACTERISTICS; METAL/SEMICONDUCTOR INTERFACE; PHYSICAL MODEL; REAL SITUATION; SCHOTTKY BARRIER HEIGHTS; TWO-DIMENSIONAL ELECTRON SYSTEM;

DEFECTS; ELECTRIC CONTACTORS; ELECTRON ENERGY LEVELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; TWO DIMENSIONAL;

OHMIC CONTACTS;

EID: 77958006039     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.02.011     Document Type: Conference Paper

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