Use of cluster secondary ions for minimization of matrix effects in the SIMS depth profiling of La/B4C multilayer nanostructures

Journal of Surface Investigation

Volumn 4, Issue 5, 2010, Pages 807-810

  Drozdov, M N ^a   Drozdov, Yu N ^a   Barysheva, M M ^a   Polkovnikov, V N ^a   Chkhalo, N I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS CONDITIONS; DEPTH RESOLUTION; ELEMENTAL COMPOSITIONS; EXPERIMENTAL SETUP; HIGH-FREQUENCY DISCHARGES; INCIDENCE ANGLES; INITIAL VALUES; LAYER-BY-LAYER ANALYSIS; LOW ENERGIES; MAGNETRON SYSTEM; MATRIX EFFECTS; MATRIX ELEMENTS; METAL STRUCTURES; MULTILAYER NANOSTRUCTURES; MULTILAYER STRUCTURES; RMS ROUGHNESS; ROUGHNESS EVOLUTION; SECONDARY IONS;

CESIUM; DEPTH PROFILING; ETCHING; IONS; MAGNETRONS; MULTILAYERS; SECONDARY EMISSION;

CESIUM COMPOUNDS;

EID: 77957995682     PISSN: 10274510     EISSN: 18197094     Source Type: Journal    
DOI: 10.1134/S1027451010050216     Document Type: Article

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