CoOx-RRAM memory cell technology using recess structure for 128Kbits memory array

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Kawabata, Suguru ^a   Nakura, Mitsuru ^a   Yamazaki, Shinobu ^a   Shibuya, Takahiro ^a   Inoue, Yushi ^a   Onishi, Junya ^a   Tabuchi, Yoshiaki ^a   Tamai, Yukio ^a   Yaoi, Yoshifumi ^a   Ishihara, Kazuya ^a   Ohta, Yoshiji ^a   Shima, Hisashi ^b   Akinaga, Hiro ^b   Fukuda, Natsuki ^c   Kurihara, Hidenao ^c   Yoshida, Yoshiaki ^c   Kokaze, Yutaka ^c   Nishioka, Yutaka ^c   Suu, Koukou ^c   Nakayama, Kazuya ^d   Kitagawa, Akio ^d   Ohnishi, Shigeo ^a   Awaya, Nobuyoshi ^a   more..

^a SHARP CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c ULVAC INC   (Japan)

^d KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE TECHNOLOGIES; FILM DEPOSITION; FILM QUALITY; GAS FLOWRATE; HIGH SPEED; LOW CURRENTS; LOW VOLTAGES; MEMORY ARRAY; MEMORY CELL; NOVEL PROCESS; PROCESS INTEGRATION; READ OPERATION;

OPTIMIZATION;

RANDOM ACCESS STORAGE;

EID: 77957923289     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488319     Document Type: Conference Paper

References (3)

1. I.G. Baek et al., IEDM Tech. Dig., (2004) 587
2. H. Shima et al., Appl. Phys. Lett. 93, (2008) 113504
3. Y. Tamai et al., Extended Abstracts SSDM, p1166 (2008)