Scaling trends of neutron effects in MLC NAND Flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 400-406

  Gerardin, S ^a   Bagatin, M ^a   Paccagnella, A ^a   Cellere, G ^b   Visconti, A ^c   Beltrami, S ^c   Andreani, C ^d   Gorini, G ^e   Frost, C D ^f  

^a UNIVERSITY OF PADOVA   (Italy)

^b Applied Materials Baccini   (Italy)

^c Numonyx   (Italy)

^d UNIVERSITY OF ROME TOR VERGATA   (Italy)

^e UNIVERSITY OF MILANO BICOCCA   (Italy)

^f RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Atmospheric neutrons; Error correction codes; Floating gate cells; Soft errors

Indexed keywords

ATMOSPHERIC NEUTRONS; CROSS SECTION; CURRENT ERROR; ERROR CORRECTION CODES; FEATURE SIZES; FLOATING GATES; FLOATING-GATE CELLS; NAND FLASH MEMORY; NEUTRON EFFECTS; PHYSICAL MECHANISM; SCALING TRENDS; SOFT ERROR;

FLASH MEMORY; MICROPROCESSOR CHIPS; NAND CIRCUITS; NEUTRONS;

ERROR CORRECTION;

EID: 77957917763     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488797     Document Type: Conference Paper

References (17)

1. J.T. Wallmark, S.M. Marcus, "Minimum Size and Maximum Packing Density of Nonredundant Semiconductor Devices,", Proceedings of the IRE, 50, pp. 286-298, 1962
2. N.Z. Butt and M. Alam, "Modeling single event upsets in Floating Gate memory cells", Proceedings of IEEE International Reliability Physics Symposium (IRPS) 2008, pp. 547-555, April 2008
3. R. C. Baumann, "Radiation-induced soft errors in advanced semiconductor technologies", IEEE Trans. On Dev. Mat. Rel., 5, pp. 305-316, 2005
4. G. Cellere et al., "Effect of Ion Energy on Charge Loss From Floating Gate Memories", IEEE Transactions on Nuclear Science, 55 (4), pp. 2042-2047, Aug. 2008
5. F. Irom and D. Nguyen, "Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Flash Memories", IEEE Transactions on Nuclear Science, 54 (6), pp. 2547-2553, Dec. 2007
6. G. Cellere et al., "Neutron-induced soft errors in advanced Flash memories", 2008 IEEE International Electron Devices Meeting (IEDM) Tech. Digest, pp. 357-360, Dec. 2008
7. N. Siefert, B. Gill, K. Foley, P. Relangi, "Multi-cell upset probabilities of 45nm high-k + metal gate SRAM devices in terrestrial and space environments" Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2008, pp. 181-186, April 2008
8. N. Mielke, et al, "Bit Error Rate in NAND Flash Memories", Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2008, pp. 9-19, April 2008
9. S. Platt, Z. Torok, C.D. Frost, S. Ansell, "Charge-Collection and Single-Event Upset Measurements at the Isis Neutron Source", IEEE Transactions on Nuclear Science, 55 (4), pp. 2126-2132, Aug. 2008
10. JEDEC Standard JESD89A "Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray Induced Soft Errors in Semiconductor Devices", Oct. 2006.
11. J. Wyss, D. Bisello, D. Pantano, "SIRAD: An irradiation facility at the LNL tandem accelerator for radiation damage studies on semiconductor detecttos and electronics devices and systems," Nucl. Instruments Methods Phys. Res. A, vol. 462, pp. 426-434, 2001
12. A. Hands, C. S. Dyer, F. Lei, "SEU Rates in Atmospheric Environments: Variations Due to Cross-Section Fits and Environment Models", IEEE Transaction on Nuclear Science 56 (4), pp. 2026-2034, Aug. 2009
13. S. Agostinelli et al., "Geant4: a simulation toolkit," Nuclear Instruments and Methods in Physics Research Section A, 506, 250-303, 2003
14. G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, R. Harboe-Sørensen, A. Virtanen, "Angular dependence of heavy ion effects in Floating Gate memory arrays", IEEE Transaction on Nuclear Science 54 (6), pp. 2371-2378, Dec. 2007
15. M. Bagatin, et al, "Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions", IEEE Transactions on Nuclear Science, 55 (6), pp. 3302-3308, Dec. 2008
16. R.A. Weller, A.L. Sternberg, L.W. Massengill, R.D. Schrimpf, D.M. Fleetwood, "Evaluating Average and Atypical Response in Radiation Effects Simulations", IEEE Transactions on Nuclear Science, 50 (6), pp. 2265-2271, Dec. 2003
17. 2 layers triggered by heavy ions", Journal of Applied Physics, Vol. 99, 2006.