A high-endurance (>100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 951-955

  Wang, Szu Yu ^a   Lue, Hang Ting ^a   Hsu, Tzu Hsuan ^a   Du, Pei Ying ^a   Lai, Sheng Chih ^a   Hsiao, Yi Hsuan ^a   Hong, Shih Ping ^a   Wu, Ming Tsung ^a   Hsu, Fang Hao ^a   Lian, Nan Tzu ^a   Lu, Chi Pin ^a   Hsieh, Jung Yu ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Hsieh, Kuang Yeu ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; CRITICAL CHALLENGES; CYCLING ENDURANCE; DE-TRAPPING; ENDURANCE RELIABILITY; HIGH TEMPERATURE; INTERFACE STATE; K -CYCLE; NAND FLASH; NITRIDE-TRAPPING DEVICE; NITRIDED; THERMAL OXIDES; TUNNEL BARRIER;

CHARGE TRAPPING; DEGRADATION; DURABILITY; NITRIDES; RELIABILITY; SOLID STATE DEVICES;

FLASH MEMORY;

EID: 77957906613     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488698     Document Type: Conference Paper

References (6)

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4. C. H. Tsai et al, IRPS 2009, pp. 294-300.
5. J. D. Lee et al, IEEE TDMR, 2004, pp. 110-117.
6. Y. H. Shih et al, IEDM 2006, pp. 503-506.