Impact on device performance and monitoring of a low dose of tungsten contamination by Dark Current Spectroscopy

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 259-264

  Domengie, F ^a,b   Regolini, J L ^b   Bauza, D ^a   Morin, P ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Clusters; Contamination; Dark current; Deep level; Image sensors; Tungsten

Indexed keywords

AVERAGE NUMBERS; CLUSTERS; CMOS IMAGE SENSOR; CURRENT PEAK; DEEP LEVEL; DEVICE PERFORMANCE; DISTRIBUTION OF METAL; DONOR LEVELS; GENERATION RATE; LOW DOSE; LOW LEVEL;

CONTAMINATION; DARK CURRENTS; IMAGE SENSORS; ION IMPLANTATION; METAL IONS; POISSON DISTRIBUTION; TUNGSTEN;

PIXELS;

EID: 77957898064     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488821     Document Type: Conference Paper

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