A pressure sensor Based on a HBAR micromachined structure

2010 IEEE International Frequency Control Symposium, FCS 2010

Volumn , Issue , 2010, Pages 361-364

  Baron, T ^a   Gachon, D ^a   Romand, J P ^a   Alzuaga, S ^a   Ballandras, S ^a   Masson, J ^b   Catherinot, L ^c   Chatras, M ^c  

^a UNIVERSITÉ DE FRANCHE COMTÉ   (France)

^b SENSeOR   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MICROMACHINED STRUCTURES; PRESSURE SENSITIVITIES; ROOM TEMPERATURE;

BENDING (DEFORMATION); PRESSURE SENSORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

WAFER BONDING;

EID: 77957882857     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/FREQ.2010.5556312     Document Type: Conference Paper

References (2)

1. D. Gachon, E. Courjon, G. Martin, L. Gauthier-Manuel, J.-C. Jeannot, W. Daniau, S. Ballandras, Fabrication of High Frequency Bulk Acoustic Wave Resonator Using Thinned Single-Crystal Lithium Niobate Layers, Ferroelectrics, vol. 362, pp. 30-40, 2008.
2. T. Baron, D. Hermelin, J.P. Romand, S. Alzuaga, S. queste, J.Y. Rauch, J.F. Leguen, B. Belgacem, S. Ballandras, SAW pressure sensor on quartz membrane lapping, proc. Of the 10th French Congress on Acoustics, Lyon, April 12-16, 2010.