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Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 1, 2010, Pages

Properties of InGaN films grown by reactive sputtering

(5) Guo, Qixin a Kusunoki, Yuta a Ding, Yaliu a Tanaka, Tooru a Nishio, Mitsuhiro a

a SAGA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AREA RATIOS; ARSENIC ATOM; BAND GAP ENERGY; DIFFRACTION PEAKS; DIRECT BAND GAP; GAAS WAFER; INGANAS; LOW SUBSTRATE TEMPERATURE; OPTICAL ANALYSIS; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE; VEGARD'S LAW;

ARSENIC; DESORPTION; DIFFRACTION; ENERGY GAP; GALLIUM ARSENIDE; GALLIUM NITRIDE; INDIUM; NITROGEN PLASMA; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 77957867266 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.081203 Document Type: Article

Times cited : (15)

References (26)

1
- 0003453296
- (Springer, Berlin) 2nd ed
- S. Nakamura, S. Pearton, and G. Fasol: The Blue Laser Diode (Springer, Berlin, 2000) 2nd ed.
- (2000) The Blue Laser Diode
- Nakamura, S.¹ Pearton, S.² Fasol, G.³

2
- 0034318865
- S. Pearton and F. Ren: Adv. Mater. 12 (2000) 1571.
- (2000) Adv. Mater. , vol.12 , pp. 1571
- Pearton, S.¹ Ren, F.²

3
- 36349029102
- X. Zhang, X. Wang, H. Xiao, C. Yang, J. Ran, C. Wang, Q. Hou, and J. Li: J. Phys. D 40 (2007) 7335.
- (2007) J. Phys. D , vol.40 , pp. 7335
- Zhang, X.¹ Wang, X.² Xiao, H.³ Yang, C.⁴ Ran, J.⁵ Wang, C.⁶ Hou, Q.⁷ Li, J.⁸

4
- 34848905285
- O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz: Appl. Phys. Lett. 91 (2007) 132117.
- (2007) Appl. Phys. Lett. , vol.91 , pp. 132117
- Jani, O.¹ Ferguson, I.² Honsberg, C.³ Kurtz, S.⁴

5
- 53749099094
- C. Neufeld, N. Toledo, S. Cruz, M. Iza, S. DenBaars, and U. Mishra: Appl. Phys. Lett. 93 (2008) 143502.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 143502
- Neufeld, C.¹ Toledo, N.² Cruz, S.³ Iza, M.⁴ DenBaars, S.⁵ Mishra, U.⁶

6
- 58149229131
- X. Zheng, R. Horng, D. Wuu, M. Chu, W. Liao, M. Wu, R. Lin, and Y. Lu: Appl. Phys. Lett. 93 (2008) 261108.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 261108
- Zheng, X.¹ Horng, R.² Wuu, D.³ Chu, M.⁴ Liao, W.⁵ Wu, M.⁶ Lin, R.⁷ Lu, Y.⁸

7
- 54849411717
- X. Chen, K. D. Matthews, D. Hao, W. J. Schaff, and L. F. Eastman: Phys. Status Solidi A 205 (2008) 1103.
- (2008) Phys. Status Solidi A , vol.205 , pp. 1103
- Chen, X.¹ Matthews, K.D.² Hao, D.³ Schaff, W.J.⁴ Eastman, L.F.⁵

8
- 0345330006
- J. Wu, W. Walukiewicz, K. Yu, W. Shan, J. Ager III, E. Haller, H. Lu, W. Schaff, W. Metzger, and S. Kutz: J. Appl. Phys. 94 (2003) 6477.
- (2003) J. Appl. Phys. , vol.94 , pp. 6477
- Wu, J.¹ Walukiewicz, W.² Yu, K.³ Shan, W.⁴ Ager III, J.⁵ Haller, E.⁶ Lu, H.⁷ Schaff, W.⁸ Metzger, W.⁹ Kutz, S.¹⁰

9
- 0000060033
- R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano: Appl. Phys. Lett. 70 (1997) 1089.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1089
- Singh, R.¹ Doppalapudi, D.² Moustakas, T.³ Romano, L.⁴

10
- 0009000279
- D. Redfield: Appl. Phys. Lett. 25 (1974) 647.
- (1974) Appl. Phys. Lett. , vol.25 , pp. 647
- Redfield, D.¹

11
- 0032094122
- Q. X. Guo, N. Shingai, M. Nishio, and H. Ogawa: J. Cryst. Growth 189-190 (1998) 466.
- (1998) J. Cryst. Growth , vol.189-190 , pp. 466
- Guo, Q.X.¹ Shingai, N.² Nishio, M.³ Ogawa, H.⁴

12
- 0034314816
- Q. X. Guo, A. Okada, H. Kidera, M. Nishio, and H. Ogawa: Jpn. J. Appl. Phys. 39 (2000) L1143.
- (2000) Jpn. J. Appl. Phys. , vol.39
- Guo, Q.X.¹ Okada, A.² Kidera, H.³ Nishio, M.⁴ Ogawa, H.⁵

13
- 0036531514
- Q. X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, and H. Ogawa: J. Cryst. Growth 237-239 (2002) 1032.
- (2002) J. Cryst. Growth , vol.237-239 , pp. 1032
- Guo, Q.X.¹ Okada, A.² Kidera, H.³ Tanaka, T.⁴ Nishio, M.⁵ Ogawa, H.⁶

14
- 21244453562
- Q. X. Guo, T. Tanaka, M. Nishio, H. Ogawa, X. D. Pu, and W. Z. Shen: Appl. Phys. Lett. 86 (2005) 231913.
- (2005) Appl. Phys. Lett. , vol.86 , pp. 231913
- Guo, Q.X.¹ Tanaka, T.² Nishio, M.³ Ogawa, H.⁴ Pu, X.D.⁵ Shen, W.Z.⁶

15
- 17944374327
- Q. X. Guo, J. Ding, T. Tanaka, M. Nishio, and H. Ogawa: Appl. Phys. Lett. 86 (2005) 111911.
- (2005) Appl. Phys. Lett. , vol.86 , pp. 111911
- Guo, Q.X.¹ Ding, J.² Tanaka, T.³ Nishio, M.⁴ Ogawa, H.⁵

16
- 54249088066
- Q. X. Guo, T. Tanaka, M. Nishio, and H. Ogawa: Jpn. J. Appl. Phys. 47 (2008) 612.
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 612
- Guo, Q.X.¹ Tanaka, T.² Nishio, M.³ Ogawa, H.⁴

17
- 36449001011
- Q. X. Guo, H. Ogawa, H. Yamano, and A. Yoshida: Appl. Phys. Lett. 66 (1995) 715.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 715
- Guo, Q.X.¹ Ogawa, H.² Yamano, H.³ Yoshida, A.⁴

18
- 84957232820
- L. DeLouise: J. Vac. Sci. Technol. A 10 (1992) 1637.
- (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 1637
- DeLouise, L.¹

19
- 0001116833
- C. Morgan, P. Kratzer, and M. Scheffler: Phys. Rev. Lett. 82 (1999) 4886.
- (1999) Phys. Rev. Lett. , vol.82 , pp. 4886
- Morgan, C.¹ Kratzer, P.² Scheffler, M.³

20
- 0022784134
- Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto: J. Electrochem. Soc. 133 (1986) 1956.
- (1986) J. Electrochem. Soc. , vol.133 , pp. 1956
- Koide, Y.¹ Itoh, H.² Sawaki, N.³ Akasaki, I.⁴ Hashimoto, M.⁵

21
- 0024718065
- T. Nagatomo, T. Kuboyama, H. Minamino, and O. Omoto: Jpn. J. Appl. Phys. 28 (1989) L1334.
- (1989) Jpn. J. Appl. Phys. , vol.28
- Nagatomo, T.¹ Kuboyama, T.² Minamino, H.³ Omoto, O.⁴

22
- 1842810141
- Z. G. Qian, W. Z. Shen, H. Ogawa, and Q. X. Guo: J. Phys.: Condens. Matter 16 (2004) R381.
- (2004) J. Phys. Condens. Matter , vol.16
- Qian, Z.G.¹ Shen, W.Z.² Ogawa, H.³ Guo, Q.X.⁴

23
- 0038347803
- T. Matsuoka, M. Nakao, H. Okamoto, H. Harima, and E. Kurimoto: Jpn. J. Appl. Phys. 42 (2003) 2288.
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 2288
- Matsuoka, T.¹ Nakao, M.² Okamoto, H.³ Harima, H.⁴ Kurimoto, E.⁵

24
- 0036925291
- V. Davydov, A. Klochikhin, V. Emtsev, D. Kurdyukov, S. Ivanov, V. Vekshin, F. Bechstedt, J. Furthmuller, J. Aderhold, J. Graul, A. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. Haller: Phys. Status Solidi B 234 (2002) 787.
- (2002) Phys. Status Solidi B , vol.234 , pp. 787
- Davydov, V.¹ Klochikhin, A.² Emtsev, V.³ Kurdyukov, D.⁴ Ivanov, S.⁵ Vekshin, V.⁶ Bechstedt, F.⁷ Furthmuller, J.⁸ Aderhold, J.⁹ Graul, J.¹⁰ Mudryi, A.¹¹ Harima, H.¹² Hashimoto, A.¹³ Yamamoto, A.¹⁴ Haller, E.¹⁵

25
- 3343003789
- D. Alexandrov, K. Butcher, and M. Wintrebert-Fouquet: J. Cryst. Growth 269 (2004) 77.
- (2004) J. Cryst. Growth , vol.269 , pp. 77
- Alexandrov, D.¹ Butcher, K.² Wintrebert-Fouquet, M.³

26
- 13644276159
- P. Carrier and S. Wei: J. Appl. Phys. 97 (2005) 033707.
- (2005) J. Appl. Phys. , vol.97 , pp. 033707
- Carrier, P.¹ Wei, S.²

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