100 mm GaN-on-SiC RF MMIC Technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1226-1229

  Palmour, John W ^a   Hallin, Christer ^a   Burk, Al ^a   Radulescu, Fabian ^a   Namishia, Dan ^a   Hagleitner, Helmut ^a   Due, Jennifer ^a   Pribble, Bill ^a   Sheppard, Scott T ^a   Barner, Jeff B ^a   Milligan, Jim ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

GaN; HEMTs; MMICs; Power amplifiers; SiC

Indexed keywords

FABRICATION PROCESS; GAN; GAN HEMTS; HEMTS; HIGH PURITY; HIGH-POWER; HIGH-VOLUME PRODUCTION; MIM CAPACITORS; MMIC TECHNOLOGY; MMICS; PROCESS DESIGN KIT; SEMI-INSULATING SUBSTRATE; SHEET RESISTIVITY; SIC; SIC SUBSTRATES; THICKNESS UNIFORMITY; WAFER THINNING; WIDE-BAND;

DC POWER TRANSMISSION; FABRICATION; GALLIUM NITRIDE; MIM DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; PROCESS ENGINEERING; SILICON CARBIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77957782205     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5515973     Document Type: Conference Paper

References (2)

1. J. W. Milligan, J. Henning, S.T. Allen, A. Ward, and J.W. Palmour "SiC MESFET and MMIC Technology Transition to Production", GaAs MANTECH Conference Digest of Papers, New Orleans, USA (2005).
2. B. Yeats, "Assessing the Reliability of Silicon Nitride Capacitors in a GaAs IC Process," IEEE Transaction on Electron Devices, vol.45, no.4, pp. April 1998.