THz electronics projects at DARPA: Transistors, TMICs, and amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1118-1121

  Albrecht, John D ^a   Rosker, Mark J ^a   Wallacet, H Bruce ^b   Changtt, Tsu His ^c  

^a DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

^b MMW Concepts LLC   (United States)

^c BOOZ ALLEN HAMILTON   (United States)

Author keywords

Microwave monolithic integrated circuits; Sub MMW power amplifiers; Terahertz

Indexed keywords

FREQUENCY DOMAINS; HIGH POWER AMPLIFIER; INP; INSTANTANEOUS BANDWIDTH; INTEGRATION TECHNIQUES; INTEGRATION TECHNOLOGIES; KEY ELEMENTS; LOW LOSS; MICROWAVE MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFICATION; PRECISION METROLOGY; RADIATION SOURCE; SUB-MMW POWER AMPLIFIERS; TERAHERTZ; TERAHERTZ ELECTRONICS; TRANSMITTER AND RECEIVER; VACUUM ELECTRONIC DEVICES;

DIELECTRIC WAVEGUIDES; INTEGRATED CIRCUITS; MICROWAVES; POWER AMPLIFIERS; QUANTUM OPTICS; RADAR IMAGING; TERAHERTZ SPECTROSCOPY; TERAHERTZ WAVES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 77957766636     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5517258     Document Type: Conference Paper

References (6)

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2. R. Lai et al, "Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz", IEEE IEDM Digest, Dec, 2007
3. M. Rodwell et al., IEEE Proceedings, Vol.96, No.2, February 2008, pp. 27 1-286.
4. E. Lind et al., "560 GHz ft, fmax operation of a refractory emitter metal InP DHBT", GigaHertz Symposium March 2008, Sweden
5. M. Rodwell et al., "Transistor and Circuit Design for 100-200 GHz ICs", 2004 IEEE Compound Semiconductor IC Symposium digest
6. R. Lai et al., "Fabrication of InP HEMT Devices with Extremely High Fmax", GOMACTech Digest. Mar, 2008.