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Journal of Luminescence

Volumn 130, Issue 12, 2010, Pages 2437-2441

Optically induced level anticrossing in undoped GaAs/AlGaAs coupled double quantum wells

(4) Shin, Y H a Park, Y H a Kim, Yongmin a,b Shon, Y c

a Dankook University (South Korea)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c Dongguk University (South Korea)

Author keywords

GaAs; Photoluminescence; Quantum well

Indexed keywords

ANTI-SYMMETRIC; ANTICROSSINGS; DOUBLE QUANTUM-WELL; ENERGY LEVEL; GAAS; GAAS/ALGAAS; HOLE PAIRS; LASER POWER; P-I-N STRUCTURE; PHOTOGENERATED ELECTRONS; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; SYMMETRIC ENERGY;

ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; LASER EXCITATION; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77957755140 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2010.08.008 Document Type: Article

Times cited : (4)

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