Difference between resistance degradation of fixed valence acceptor (Mg) and variable valence acceptor (Mn)-doped BaTiO3 ceramics

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Yoon, Seok Hyun ^a,b   Randall, Clive A ^a   Hur, Kang Heon ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; AIR ATMOSPHERE; CHEMICAL MODEL; COARSE-GRAINED; DEGRADATION BEHAVIOR; IONIC TRANSFERENCE; LOW TEMPERATURES; MG CONCENTRATIONS; MG-DOPED; MN CONCENTRATIONS; MN-DOPED; OXYGEN PARTIAL PRESSURE; OXYGEN VACANCY CONCENTRATION; RE-OXIDATION; REDUCING ATMOSPHERE; RESISTANCE DEGRADATION; TRAP SITES; TRAPPING EFFECTS; TRAPPING SITES; UNIFORM GRAIN SIZE;

BARIUM COMPOUNDS; CERAMIC MATERIALS; CONCENTRATION (PROCESS); DEFECTS; DEGRADATION; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM COMPOUNDS;

MANGANESE;

EID: 77957747857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3480992     Document Type: Article

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