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Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films

(7) Yang, Z a,c Zhou, H M a Chen, W V b Li, L a Zhao, J Z a Yu, P K L b Liu, J L a

a University of California Riverside (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER THICKNESS; CRYSTALLINITIES; ELECTRON CONCENTRATION; HOMO BUFFERS; HOMO-BUFFER LAYERS; MOBILITY RATIOS; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; STRAIN RELAXATION EFFECTS; THICKNESS EFFECT; ZNO; ZNO LAYERS; ZNO THIN FILM;

CARRIER MOBILITY; CONCENTRATION (PROCESS); ELECTRONS; EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLIC FILMS; OPTICAL FILMS; VAPOR DEPOSITION; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 77957732445 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3486445 Document Type: Article

Times cited : (5)

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