Raman spectroscopy studies of the high-temperature evolution of the free carbon phase in polycarbosilane derived SiC ceramics

Ceramics International

Volumn 36, Issue 8, 2010, Pages 2455-2459

  Yan, Ma ^a   Song, Wang ^a   Zhao Hui, Chen ^a  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

Annealing; Ceramics; Microstructure; Raman spectroscopy

Indexed keywords

ANNEALING TEMPERATURES; CERAMICS; CRITICAL POINTS; DEGREE OF DISORDER; EXCITATION WAVELENGTH; FREE CARBON; HIGH TEMPERATURE; HIGHER TEMPERATURES; MICROSTRUCTURE EVOLUTIONS; OXIDATION BEHAVIORS; OXIDATION TEMPERATURE; PEAK POSITION; POLYCARBOSILANES; RAMAN SPECTRA; SIC CERAMICS; TURBOSTRATIC;

AMORPHOUS CARBON; ANNEALING; FULL WIDTH AT HALF MAXIMUM; LASER EXCITATION; MICROSTRUCTURE; OXIDATION; POLYSILANES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON CARBIDE;

CERAMIC MATERIALS;

EID: 77957712249     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2010.08.003     Document Type: Article

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