Ultrafast crystallization kinetics in (Pb,La)(Zr0.30Ti0.70) O3 thin films by pulsed excimer laser annealing

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 57, Issue 10, 2010, Pages 2182-2191

  Bharadwaja, Srowthi S N ^a   Kulik, Joseph ^a   Akarapu, Ravindra ^a   Beratan, Howard ^b   Trolier Mckinstry, Susan ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Bridge Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZED FILMS; DEFECT CONCENTRATIONS; DIELECTRIC AND FERROELECTRIC PROPERTIES; ENERGY DENSITY; EXPOSURE-TIME; GRAIN SIZE; GROWTH FRONT; KRF EXCIMER LASER; LASER ANNEALING; NON-ISOTHERMAL CONDITION; NUCLEATION AND GROWTH; PB(ZR , TI)O; PEROVSKITE PHASE; PULSE EXPOSURE; PULSE WIDTH; PULSED EXCIMER LASER ANNEALING; SILICON SUBSTRATES; SUBSTRATE TEMPERATURE; ULTRA-FAST;

CRYSTALLIZATION KINETICS; EXCIMER LASERS; FERROELECTRIC FILMS; FERROELECTRICITY; FILM GROWTH; GAS LASERS; GROWTH KINETICS; KRYPTON; LEAD; NUCLEATION; PEROVSKITE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SUBSTRATES; THICK FILMS; THIN FILMS; VAPOR DEPOSITION; ZIRCONIUM;

PULSED LASERS;

EID: 77957705827     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2010.1676     Document Type: Conference Paper

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