Electronic structure and thermoelectric properties of Bi2Te 3 crystals and graphene-doped Bi2Te3

Thin Solid Films

Volumn 518, Issue 24 SUPPL., 2010, Pages

  Li, A H ^a   Shahbazi, M ^a   Zhou, S H ^a   Wang, G X ^a   Zhang, C ^a   Jood, P ^a   Peleckis, G ^a   Du, Y ^a   Cheng, Z X ^a   Wang, X L ^a   Kuo, Y K ^b  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Bi2Te3; Conductivity; Density of states; Graphene; Seebeck coefficient; Thermoelectric materials

Indexed keywords

BI2TE3; CONDUCTIVITY; DENSITY OF STATE; GRAPHENES; SEEBECK; THERMOELECTRIC MATERIAL;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GRAPHENE; RIETVELD METHOD; RIETVELD REFINEMENT; SCANNING ELECTRON MICROSCOPY; TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 77957694670     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.124     Document Type: Article

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