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Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 10, 2010, Pages

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

(8) Jia, R R a Zhang, J C a Zheng, R K b Deng, D M a Habermeier, H U c Chan, H L W b Luo, H S d Cao, S X a

a SHANGHAI UNIVERSITY (China)

b HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

d SHANGHAI INSTITUTE OF CERAMICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957594083 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.82.104418 Document Type: Article

Times cited : (26)

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