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Volumn , Issue , 2010, Pages

Comparison of plasma-effect in different InP-based VCSELs

Author keywords

[No Author keywords available]

Indexed keywords

INP; PLASMA EFFECTS;

EID: 77957593168     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (9)
  • 3
    • 34248382491 scopus 로고    scopus 로고
    • Long-wavelength (λ ≥ 1.3 μm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing
    • Aug.
    • M.-C. Amann and M. Ortsiefer, "Long-wavelength (λ ≥ 1.3 μm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing," Phys. Status Solidi A, vol. 203, pp. 3538-3544, Aug. 2006.
    • (2006) Phys. Status Solidi A , vol.203 , pp. 3538-3544
    • Amann, M.-C.1    Ortsiefer, M.2
  • 5
    • 67650967254 scopus 로고    scopus 로고
    • Simplified model of the dynamic thermal tuning behavior of VCSELs
    • July
    • J. Chen, A. Hangauer, and M.-C. Amann, "Simplified model of the dynamic thermal tuning behavior of VCSELs," Photonics Technology Letters, IEEE, vol. 20, pp. 1082-1084, July, 2008.
    • (2008) Photonics Technology Letters, IEEE , vol.20 , pp. 1082-1084
    • Chen, J.1    Hangauer, A.2    Amann, M.-C.3
  • 7
    • 0020090793 scopus 로고
    • Theory of the linewidth of semiconductor lasers
    • Feb
    • C. Henry, "Theory of the linewidth of semiconductor lasers," Quantum Electronics, IEEE Journal of, vol. 18, pp. 259-264, Feb 1982.
    • (1982) Quantum Electronics, IEEE Journal , vol.18 , pp. 259-264
    • Henry, C.1
  • 9
    • 0027617215 scopus 로고
    • Gain and saturation in semiconductor lasers
    • June
    • J. Huang and L. W. Casperson, "Gain and saturation in semiconductor lasers," Optical and Quantum Electronics, vol. 25, pp. 369-390, June 1993.
    • (1993) Optical and Quantum Electronics , vol.25 , pp. 369-390
    • Huang, J.1    Casperson, L.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.