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1
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High-speed tuning in vertical-cavity surface-emitting lasers
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June
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A. Hangauer, J. Chen, R. Strzoda, and M. Amann, "High-speed tuning in vertical-cavity surface-emitting lasers," in CLEO Europe EQEC 2009, June 2009.
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(2009)
CLEO Europe EQEC 2009
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Hangauer, A.1
Chen, J.2
Strzoda, R.3
Amann, M.4
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2
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1.55 μm VCSEL arrays for high-bandwidth WDM-PONs
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Feb.15
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W. Hofmann, E. Wong, G. Böhm, M. Ortsiefer, N. Zhu, and M. Amann, "1.55 μm VCSEL arrays for high-bandwidth WDM-PONs," Photonics Technology Letters, IEEE, vol. 20, pp. 291-293, Feb.15, 2008.
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Photonics Technology Letters, IEEE
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Hofmann, W.1
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Böhm, G.3
Ortsiefer, M.4
Zhu, N.5
Amann, M.6
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3
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Long-wavelength (λ ≥ 1.3 μm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing
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Aug.
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M.-C. Amann and M. Ortsiefer, "Long-wavelength (λ ≥ 1.3 μm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing," Phys. Status Solidi A, vol. 203, pp. 3538-3544, Aug. 2006.
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Amann, M.-C.1
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4
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Extended near-infrared wavelength VCSELs for optical sensing
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Sept.
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M. Ortsiefer, J. Rosskopf, E. Rönneberg, Y. Xu, K. Maisberger, R. Shau, C. Neumeyr, W. Hofmann, G. Böhm, A. Hangauer, J. Chen, R. Strzoda, and M-C. Amann, "Extended near-infrared wavelength VCSELs for optical sensing," in Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International, pp. 167-168, Sept. 2008.
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Shau, R.6
Neumeyr, C.7
Hofmann, W.8
Böhm, G.9
Hangauer, A.10
Chen, J.11
Strzoda, R.12
Amann, M.-C.13
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5
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67650967254
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Simplified model of the dynamic thermal tuning behavior of VCSELs
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July
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J. Chen, A. Hangauer, and M.-C. Amann, "Simplified model of the dynamic thermal tuning behavior of VCSELs," Photonics Technology Letters, IEEE, vol. 20, pp. 1082-1084, July, 2008.
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(2008)
Photonics Technology Letters, IEEE
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Chen, J.1
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7
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Theory of the linewidth of semiconductor lasers
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Feb
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C. Henry, "Theory of the linewidth of semiconductor lasers," Quantum Electronics, IEEE Journal of, vol. 18, pp. 259-264, Feb 1982.
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Quantum Electronics, IEEE Journal
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Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction
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R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M. C. Amann, "Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction," Electronics Letters, vol. 39, no. 24, pp. 1728-1729, 2003.
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Electronics Letters
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Shau, R.1
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Rosskopf, J.5
Bohm, G.6
Maute, M.7
Meissner, P.8
Amann, M.C.9
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9
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0027617215
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Gain and saturation in semiconductor lasers
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June
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J. Huang and L. W. Casperson, "Gain and saturation in semiconductor lasers," Optical and Quantum Electronics, vol. 25, pp. 369-390, June 1993.
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