Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 75-76

  Zhang, Q ^a,b   Lu, Y ^a   Xing, G H ^a   Richter, C A ^b   Koeste, S J ^c   Koswatta, S O ^d  

^a University of Notre Dame   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c University of Minnesota   (United States)

^d IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; BALLISTIC TRANSPORTS; BAND STRUCTURE ENGINEERING; CHANNEL THICKNESS; DIGITAL ELECTRONICS; DOUBLE-GATE; EFFECTIVE MASS; ELECTROSTATIC INTEGRITY; GATE LENGTH; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; MOBILITY DEGRADATION; MOS-FET; MOSFETS; NEW DEVICES; ON-CURRENTS; ROADMAP; SCALING DOWN; SCHOTTKY BARRIERS; SERIES RESISTANCES; SI NANOWIRE; SOURCE-TO-DRAIN TUNNELING; THIN SOI; TUNABLE BAND-GAP;

BALLISTICS; ELECTROSTATICS; GEOMETRY; GRAPHENE; HUBBARD MODEL; MESFET DEVICES; MOSFET DEVICES; NANOWIRES; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957570472     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551933     Document Type: Conference Paper

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