Dielectric properties of electron irradiated PbZrO3 thin films

Bulletin of Materials Science

Volumn 33, Issue 3, 2010, Pages 191-196

  Aparna, Shetty ^a   Jali, V M ^a   Sanjeev, Ganesh ^b   Parui, Jayanta ^c   Krupanidhi, S B ^c  

^a GULBARGA UNIVERSITY   (India)

^b MANGALORE UNIVERSITY   (India)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Antiferroelectrics; Irradiation effects; PbZrO3

Indexed keywords

ANTIFERROELECTRICS; BUTTERFLY LOOP; DIELECTRIC AND FERROELECTRIC PROPERTIES; DIELECTRIC CONSTANTS; FREQUENCY DISPERSION; HIGHER TEMPERATURES; INTERNAL BIAS FIELD; IRRADIATED FILMS; IRRADIATION EFFECTS; PBZRO3; RADIATION-INDUCED; SOL-GEL TECHNIQUE; SPACE CHARGE POLARIZATION; STRUCTURAL DEFECT;

DIELECTRIC LOSSES; ELECTRIC FIELDS; ELECTROMAGNETIC INDUCTION; ELECTRON IRRADIATION; ELECTRONS; GRAIN BOUNDARIES; HYSTERESIS; OXYGEN; OXYGEN VACANCIES; PERMITTIVITY; PHASE TRANSITIONS; POLARIZATION; RADIATION; THIN FILMS;

HYSTERESIS LOOPS;

EID: 77957569483     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12034-010-0029-5     Document Type: Article

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