Band structure at heterojunction interfaces of GaInP solar cells

Solar Energy Materials and Solar Cells

Volumn 94, Issue 11, 2010, Pages 1953-1958

  Gudovskikh, A S ^a   Kleider, J P ^b   Kalyuzhnyy, N A ^c   Lantratov, V M ^c   Mintairov, S A ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b UNIV PARIS SUD   (France)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Heterojunction; III V Solar cells; Interfaces

Indexed keywords

ADMITTANCE MEASUREMENTS; ADMITTANCE SPECTROSCOPIES; ALGAINP; BARRIER HEIGHTS; DOUBLE LAYERS; EXPERIMENTAL STUDIES; FUNDAMENTAL LIMITATIONS; GAINP; HETEROJUNCTION INTERFACES; I - V CURVE; III/V SOLAR CELLS; INTERFACES; NUMERICAL SIMULATION; POTENTIAL BARRIERS; VALENCE BAND OFFSETS;

BAND STRUCTURE; SOLAR CELLS;

HETEROJUNCTIONS;

EID: 77957124552     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.027     Document Type: Article

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