Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

Solar Energy Materials and Solar Cells

Volumn 94, Issue 11, 2010, Pages 1860-1863

  Vygranenko, Y ^a   Fathi, E ^b   Sazonov, A ^b   Vieira, M ^a,c   Nathan, A ^d  

^a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^b UNIVERSITY OF WATERLOO   (Canada)

^c UNINOVA   (Portugal)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Conductivity; Nanocrystalline silicon; PECVD; Photodiode; Solar cell

Indexed keywords

A-SI:H; A-SIC:H; ABSORPTION LOSS; AL SUBSTRATE; BORON-DOPED; CONDUCTIVITY; ENHANCED SENSITIVITY; FILM PROPERTIES; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); LOW-LEAKAGE CURRENT; NANOCRYSTALLINES; NC-SI:H; P-I-N STRUCTURE; P-LAYER; PECVD; SUBSTRATE TEMPERATURE; TRIMETHYLBORON; WINDOW LAYER;

BORON; DEPOSITION; OPTICAL PROPERTIES; PHOTODIODES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLAR CELLS; SUBSTRATES; THICK FILMS;

NANOCRYSTALLINE SILICON;

EID: 77957115663     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.044     Document Type: Article

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