Chapter 6 Photovoltaic Infrared Detectors

Semiconductors and Semimetals

Volumn 18, Issue C, 1981, Pages 201-311

  Reine, M B ^a   Sood, A K ^a   Tredwell, T J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOVOLTAIC;

EID: 77957070349     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62766-0     Document Type: Article

References (220)

1. Anderson, W.W., Infrared Phys., 17, 1977, 147.
2. Andrievskii, A.I., Teodorovich, A.S., Shneider, A.D., Fiz. Tekh. Provodn., 7, 1973, 1659 [English transl.: Sov. Phys.—Semicond.7, 1112 (1974)].
3. Andrukhiv, M.G., Mal'tseva, V.A., Ivanov-Omskii, V.I., Ogordnikov, V.K., T. Ts., Totieva, Fiz. Tekh. Provodn., 13, 1979, 362 [English transl.:Sov. Phys. —Semicond.13, 210 (1979)].
4. Atalla, M.M., Tannenbaum, E., Schiebner, E.J., Bell System Tech. J., 38, 1959, 749.
5. Baars, J., Sorger, F., Solid State Commun., 10, 1972, 875.
6. Bahir, G., Bernstein, T., Kalish, R., Rad. Effects, 48, 1980, 247.
7. Beck, J. D., and Sanborn, G. (1979). (Hg.Cd)Te: Trapping and Surface Processing. Final Rep. for Air Force Materials Laboratory Contract F33615-76-C-5070, AFML-TR-79-4046, Volume 1.
8. Becla, P., Pawlikowski, J.M., Infrared Phys., 16, 1976, 457.
9. Blakemore, J.S., “Semiconductor Statistics.”. 1962, Pergamon, Oxford.
10. Bowers, J.E., Schmit, J.L., Mroczkowski, J., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 55.
11. Bowers, J.E., Schmit, J.L., Speerschneider, C.J., Maciolek, R.B., IEEE Trans. Electron Devices, ED-27, 1980, 24.
12. Bratt, P. R. (1978). Development of Large Area PV HgCdTe Detectors for 2.06 μm and 3.85 μm. Interim Rep. for U.S. Army Night Vision and Electro-Optics Laboratory Contract DAAB07-76-C-0803 (DDC AD A067306).
13. Bratt, P.R., Vanderwyck, A.H.B., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1977, 221 (DDC AD B025619).
14. Broudy, R.M., Reine, M.B., Proc. Soc. Photo-Opt. Instrum. Eng., 124, 1977, 62.
15. Broudy, R., Gurnee, M., Tredwell, T., White, J., Proc. Soc. Photo-Opt. Instrum. Eng., 132, 1978, 10.
16. Broudy, R., et al. Proc. Soc. Photo-Opt. Instrum. Eng., 217, 1980, 69.
17. Brudnyi, V.N., Voitsekhovskii, A.V., Grechukh, Z.G., Krivov, M.A., Lilenko, Yu. V., Limarenko, L.N., Pashkovskii, M.V., Petrov, A.S., Potapov, A.I., Fiz. Tekh. Provodn., 11, 1977, 1540 [English transl.: Sov. Phys.—Semicond.11, 905].
18. Bubulac, L.O., Shin, S., Tennant, W.E., Wang, C.C., Jpn. J. Appl. Phys. Suppl., 19–1, 1979, 495.
19. Casselman, T.N., J. Appl. Phys., 52, 1980, 848.
20. Casselman, T.N., Petersen, P.E., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 37.
21. Casselman, T.N., Petersen, P.E., Solid State Commun., 33, 1980, 615.
22. Chapman, R. A., et al. (1978). Multiplexed Intrinsic Detector Arrays with Signal Processing—Monolithic HgCdTe Technology. Interim Rep., U.S. Naval Research Laboratory Contract N00173-78-C-0003 (DDC AD B032527L).
23. Childs, R.B., Ruths, J.M., Sullivan, T.E., Fonash, S.J., J. Vac. Sci. Technol., 15, 1978, 1397.
24. Choo, S.C., Solid Slate Electron., 11, 1968, 1069.
25. Christensson, S., Lundstrom, I., Solid State Electron., 11, 1968, 813.
26. Christensson, S., Lundstrom, I., Svensson, C., Solid State Electron., 11, 1968, 797.
27. Chu, M., Shin, S., Vanderwyck, A.H.B., Bubulac, L.O., Tennant, W.E., Wang, C.C., IEEE Int. Electron Device Meeting Tech. Digest, 1979, 659.
28. Cohen, S. C. (1972). Photodiodes for Ten Micrometer Laser Communications Systems. NASA Tech. Rep. TM-Z-66135.
29. Cohen-Solal, G., Marfaing, Y., Solid State Electron., 11, 1968, 1131.
30. Cohen-Solal, G., Riant, Y., Appl. Phys. Lett., 19, 1971, 436.
31. Cohen-Solal, G., Sella, C., Imhoff, D., Zozime, A., Jpn. J. Appl. Phys. Supplement 2, Part, 1, 1974, 517.
32. Cohen-Solal, G., Zozime, A., Motte, C., Riant, Y., Infrared Phys., 16, 1976, 555.
33. Domhaus, R., Nimtz, G., “Springer Tracts in Modern Physics,”, 1976, Springer-Verlag, Berlin and New York, 1–119.
34. Dudziak, E., Becla, P., Brzezinski, J., Jedral, L., Solid State Commun., 27, 1978, 987.
35. Duke, C.B., Tunneling in Solids. Solid State Phys.(Supplement 10), 1969.
36. Eisenman, W.L., Merriam, J.D., Potter, R.F., Williardson, R.K., Beer, A.C., (eds.) “Semiconductors and Semimetals”, 12, 1977, Academic Press, New York, 1–38 Infrared Detectors (II).
37. Elliott, C.T., Melngailis, I., Harman, T.C., Foyt, A.G., J. Phys. Chem. Solids, 33, 1972, 1527.
38. Figurovskii, E.N., Kireev, P.S., Vanyukov, A.V., Evseev, Yu. V., Korovin, A.P., Fiz. Tekh. Provodn., 3, 1969, 1857 [English transl.: Sov. Phys.—Semicond.3, 1572 (1970)].
39. Finkman, E., Nemirovsky, Y., J. Appl. Phys., 50, 1979, 4356.
40. Fiorito, G., Gasparrini, G., Svelto, F., Appl. Phys. Lett., 23, 1973, 448.
41. Fiorito, G., Gasparrini, G., Svelto, F., Infrared Phys., 15, 1975, 287.
42. Fiorito, G., Gasparrini, G., Svelto, F., Infrared Phys., 16, 1976, 531.
43. Fiorito, G., Gasparrini, G., Svelto, F., Infrared Phys., 17, 1977, 25.
44. Fiorito, G., Gasparrini, G., Svelto, F., Appl. Phys., 17, 1978, 105.
45. Fonger, W.H., Loferski, J.J., Rappaport, P., J. Appl. Phys., 29, 1953, 588.
46. Foyt, A.G., Harman, T.C., Donnelly, J.P., Appl. Phys. Lett., 18, 1971, 321.
47. Gartner, W.W., Phys. Rev., 116, 1959, 84.
48. Grant, W.T., Hutcheson, E.T., Proc. Meeting IRIS Specialty Group Infrared Detectors, 1, 1979, 191.
49. Grove, A.S., “Physics and Technology of Semiconductor Devices.”. 1967, Wiley, New York.
50. Grove, A.S., Fitzgerald, D.J., IEEE Trans. Electron Devices, Ed-12, 1965, 619.
51. Grove, A.S., Fitzgerald, D.J., Solid State Electron., 9, 1966, 783.
52. Guggenbuehl, W., Strutt, M.J.O., Proc. IRE, 45, 1957, 839.
53. Gurnee, M. N. et al. (1979). Multiplexed Intrinsic Detector Arrays with Signal Processing-Hybrid (Hg.Cd)Te PV Technology. Interim Rep., U.S. Naval Research Laboratory Contract N00173-77-C-0335 (DDC AD B035619L).
54. Hall, R.N., Proc. Inst. Elec. Eng. Supplement B, 106, 1960, 923.
55. Harman, T.C., Melngailis, I., Wolfe, R., (eds.) “Applied Solid State Science”, 4, 1974, Academic Press, New York, 1–94.
56. Hauser, J.R., Solid State Electron., 14, 1971, 133.
57. Henisch, H.K., “Rectifying Semiconductor Contacts.”. 1957, Oxford Univ. Press, London and New York.
58. Hoendervoogt, R.M., Kormos, K.A., Rosbeck, J.P., Toman, J.R., Burgett, C.B., IEEE Int. Electron Device Meeting Tech. Digest, 1978, 510.
59. Holloway, H., J. Appl. Phys., 49, 1978, 4264.
60. Holloway, H., J. Appl. Phys., 50, 1979, 1386.
61. Hovel, H.G., “Semiconductors and Semimetals”. Williardson, R.K., Beer, A.C., (eds.), 1975, Solar Cells. Academic Press, New York Vol. 11.
62. Hsu, S.T., Solid State Electron., 13, 1970, 843.
63. Hsu, S.T., Solid State Electron., 13, 1970, 1451.
64. Hsu, S.T., Fitzgerald, D.J., Grove, A.S., Appl. Phys. Lett., 12, 1968, 287.
65. Hurwitz, C.E., Foyt, A.G., Lindley, W.T., MIT Lincoln Laboratory Solid State Research Rep.(No. 4), 1972, 1–4 (DDC AD 736501).
66. Igras, E., Piotrowski, J., Zimmoch-Higersberger, I., Electron Tech., 10, 1977, 63.
67. Ivanov-Omskii, V.I., Maltseva, V.A., Britov, A.D., Sivachenkov, S.D., Phys. Status Solidi (a), 46, 1978, 77.
68. Iverson, R. B. (1979). Minority Carrier Diffusion Lengths Using EBIC. B. S. Thesis, M. I. T., Cambridge, Massachusetts.
69. Johnson, E.S., Schmit, J.L., J. Electron. Mater., 6, 1977, 25.
70. Kajiyama, K., Mizushima, Y., Sahata, S., Appl. Phys. Lett., 23, 1973, 458.
71. Kalma, A.H., Cesena, R.A., IEEE Trans. Nucl. Sci., NS-26, 1979, 4833.
72. Kane, E.O., J. Appl. Phys., 32, 1961, 83.
73. Kinch, M.A., Brau, M.J., Simmons, A., J. Appl. Phys., 44, 1973, 1649.
74. Kinch, M.A., Chapman, R.A., Simmons, A., Buss, D.D., Borrello, S.R., Infrared Phys., 20, 1980, 1.
75. Kingston, R.H., Proc. IRE, 42, 1954, 829.
76. Kingston, R.H., “Detection of Optical and Infrared Radiation.”. 1978, Springer-Verlag, Berlin and New York.
77. Koehler, T. (1976a). 10.6 Micron (Hg, Cd)Te Photodiode Module. Final Rep., U.S. Army Electronics Command Contract DAAB07-71-C-0236 (DDC AD A032851).
78. Koehler, T. (1976b). Proc. Meeting IRIS Specialty Group Infrared Detectors (U) 1, 197 (DDC AD B025618).
79. Koehler, T. (1977). Ion Implantation of Gold In Mercury Cadmium Telluride, U.S. Patent 4,003,759.
80. Koehler, T., Chiang, A.M., Proc. Soc. Photo-Opt. Instrum. Eng., 62, 1975, 26.
81. Koehler, T., McNally, P.J., Opt. Eng., 13, 1974, 312.
82. Kohn, A.N., Schlickman, J.J., IEEE Trans. Electron Devices, ED-16, 1969, 885.
83. Kolodny, A., Kidron, I., IEEE Trans. Electron Devices, ED-27, 1980, 37.
84. Kolodny, A., Shacham-Diamand, Y.J., Kidron, I., IEEE Trans. Electron Devices, ED-27, 1980, 591.
85. Kruse, P.W., Appl. Opt., 4, 1965, 687.
86. Kruse, P.W., McGlauchlin, L.D., McQuistan, R.B., “Elements of Infrared Technology.”. 1962, Wiley, New York.
87. Kuno, H.J., IEEE Trans. Electron Devices, ED-11, 1964, 8.
88. Lang, D.V., J. Appl. Phys., 45, 1974, 3014.
89. Lang, D.V., J. Appl. Phys., 45, 1974, 3023.
90. Lang, D.V., Logan, R.A., J. Electron. Mater., 4, 1975, 1053.
91. Lanir, M., Shin, S.H., J. Appl. Phys., 22, 1980, 57.
92. Lanir, M., Vanderwyck, A.H.B., Wang, C.C., J. Appl. Phys., 49, 1978, 6182.
93. Lanir, M., Wang, C.C., Vanderwyck, A.H.B., IEEE Int. Electron Device Meeting Tech. Digest, 1978, 421.
94. Lanir, M., Vanderwyck, A.H.B., Wang, C.C., J. Electron. Mater., 8, 1979, 175.
95. Lanir, M., Wang, C.C., Vanderwyck, A.H.B., Appl. Phys. Lett., 34, 1979, 50.
96. Lanir, M., IEEE Int. Electron Device Meeting Tech. Digest, 1979, 560.
97. Lauritzen, P.O., IEEE Trans. Electron Devices, ED-15, 1968, 770.
98. Lawson, W.D., Nielsen, S., Putley, E.H., Young, A.S., J. Phys. Chem. Solids, 9, 1959, 325.
99. Lax, B., Neustadter, S.F., J. Appl, Phys., 25, 1954, 1148.
100. Leadon, R.E., Mallon, C.E., Infrared Phys., 15, 1975, 259.
101. Legros, R., Marfaing, Y., Triboulet, R., J. Phys. Chem. Solids, 39, 1978, 179.
102. Leonberger, F., Hurwitz, C.E., Foyt, A.G., Donnelly, J.P., Lindley, W.T., Walpole, J.N., MIT Lincoln Laboratory Solid State Research Rep.(No. 4), 1971, 1–11 (DDC AD 736501).
103. Lindholm, F.A., Fossum, J.G., Burgess, E.L., IEEE Trans. Electron Devices, ED-26, 1979, 165.
104. Long, D. (1977). “Topics in Applied Physics” (R. J. Keys, ed.), Vol. 19, Optical and Infrared Detectors, pp. 101–147. Springer-Verlag, Berlin and New York.
105. Long, D., Schmit, J.L., Willardson, R.K., Beer, A.C., (eds.) “Semiconductors and Semimetals”, 5, 1970, Academic Press, New York, 175–225 Infrared Detectors.
106. Long, D., Tredwell, T.J., Woodfill, J.R., Proc. Joint Meeting IRIS Specialty Groups Infrared Detectors and Imaging (U), 1, 1978, 387 (DDC AD B033464).
107. Longshore, R.E., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 209 (DDC AD B053886).
108. Lutsiv, R.V., et al. Fiz. Tekh. Provodn., 12, 1978, 427 [English transi: Sov. Phys.—Semicond., 12, 247 (1978)].
109. Mallon, C.E., Naber, J.A., Colwell, J.F., Green, B.A., IEEE Trans. Nucl. Sci., NS-20, 1973, 214.
110. Mallon, C.E., Green, B.A., Leadon, R.E., Naber, J.A., IEEE Trans. Nucl. Sci., NS-22, 1975, 2283.
111. Marfaing, Y., Chevallier, J., Pell, E.M., (eds.) Proc Int. Conf. Photoconduct., 1971, Pergamon, Oxford, 373–377.
112. Marfaing, Y., Chevallier, J., IEEE Trans. Electron Devices, ED-18, 1971, 465.
113. Maraglit, S., Nemirovsky, Y., J. Electrochem. Soc., 127, 1980, 1406.
114. Margalit, S., Nemirovsky, Y., Rotstein, I., J. Appl. Phys., 50, 1979, 6386.
115. Marine, J., Motte, C., Appl. Phys. Lett., 23, 1973, 450.
116. Marshak, A.H., Shrivastava, R., Solid State Electron., 22, 1979, 567.
117. Mayer, J.W., Marsh, O.J., Appl. Solid State Sci. 1 (1969), 239–342.
118. McNally, P. J. (1974). Development of (Hg, Cd)Te Elevated Temperature Photovoltaic Detectors. Final Report for U.S. Army Night Vision Laboratory Contract DAAK02–72-C-0331 (DDC AD 921828).
119. McWhorter, A. L. (1957). “Semiconductor Surface Physics” (R. H. Kingston, ed.), pp. 207–228. Univ. of Pennsylvania Press, Philadelphia, Pennsylvania.
120. Melngailis, I., J. Lumin, 7, 1973, 501.
121. Melngailis, I., Harman, T.C., Semiconductors and Semimetals”. Willardson, R.K., Beer, A.C., (eds.) Infrared Detectors, 5, 1970, Academic Press, New York, 111–174.
122. Melngailis, I., Harman, T.C., MIT Lincoln Laboratory Solid State Research Rep.(No. 3), 1970, 1 (DDC AD 714079).
123. Melngailis, J., Ryan, J.L., Harman, T.C., J. Appl. Phys., 44, 1973, 2647.
124. Miller, G.L., Lang, D.V., Kimerling, L.C., Ann. Rev. Mater. Sci. 7 (1977), 377–448.
125. Moll, J.L., Proc. IRE, 46, 1958, 1076.
126. Mroczkowski, J., Vydyanath, H., J. Electrochem. Soc., 128, 1980, 655.
127. Neamen, D.A., Grannemann, W.W., Solid State Electron., 14, 1971, 1319.
128. Nelson, D.A., Higgins, W.M., Lancaster, R.A., Proc. Soc. Photo-Opt. lnstrum. Eng., 225, 1980, 48.
129. Nemirovsky, Y., Margalit, S., Kidron, I., Appl. Phys. Lett, 36, 1980, 466.
130. Nicollian, E.H., Goetzberger, A., Bell Syst. Tech. J., 46, 1967, 1055.
131. Nicollian, E.H., Melchior, H., Bell Syst. Tech. J., 46, 1967, 2019.
132. Noble, V.E., Thomas, J.E. Jr., J. Appl. Phys., 32, 1961, 1709.
133. Pawlikowski, J.M., Becla, P., Infrared Phys., 15, 1975, 331.
134. Petersen, P.E., J. Appl. Phys., 41, 1970, 3465.
135. Peyton, B.J., DiNardo, A.J., Kanischak, G.M., Arams, F.R., Lange, R.A., Sard, E.W., IEEE J. Quantum Electron., QE-8, 1972, 252.
136. Pickar, D.A., Wolfe, R., (eds.) “Applied Solid State Science”, 5, 1975, Academic Press, New York, 151–249.
137. Piotrowski, J., Fiz. Tekn. Provodn., 11, 1977, 1088 [English transl.: Sov. Phys.—Semicond.11, 643 (1977)].
138. Polla, D. L. (1979). P-(Hg, Cd)Te Schottky Barrier Photodiodes. B. S. Thesis, M. I. T. Cambridge, Massachusetts.
139. Polla, D.L., Jones, C.E., Solid State Commun., 36, 1980, 809.
140. Polla, D.L., Sood, A.K., IEEE Int. Electron Device Meeting Tech. Digest, 1978, 419.
141. Polla, D.L., Sood, A.K., J. Appl. Phys., 51, 1980, 4908.
142. Preier, H., Appl. Phys. Lett., 10, 1967, 361.
143. Pruett, G.R., Petritz, R.L., Proc. IRE, 47, 1959, 1524.
144. Redfield, D., Appl. Phys. Lett., 35, 1979, 182.
145. Reine, M.B., Broudy, R.M., Proc. Soc. Photo-Opt. lnstrum. Eng., 124, 1977, 80.
146. Rhoderick, E.H., “Metal-Semiconductor Contacts,”. 1978, Oxford Univ. Press (Clarendon), London and New York.
147. Riley, K.J., Bratt, P.R., Lockwood, A.H., Proc. Joint Meeting IRIS Specialty Groups Infrared Detectors and Imaging, 1, 1978, 333 (DDC AD B033464).
148. Riley, K.J., Lockwood, A.H., Bratt, P.R., Proc. Joint Meeting IRIS Specialty Groups Infrared Detectors and Imaging, 1, 1978, 363 (DDC AD B033464).
149. Riley, K.J., Myrosznyk, J.M., Bratt, P.R., Lockwood, A.H., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 199.
150. Rodot, M., Vérié, C., Marfaing, Y., Besson, J., Lebloch, H., IEEE J. Quantum Electron., QE-2, 1966, 586.
151. Sah, C.T., IRE Trans. Electron Devices, ED-9, 1962, 94.
152. Sah, C.T., Hielscher, F.H., Phys. Rev. Lett., 17, 1966, 956.
153. Sah, C.T., Noyce, R.N., Shockley, W., Proc. IRE, 45, 1957, 1228.
154. Sawyer, D.E., Rediker, R.H., Proc. IRE, 46, 1958, 1122.
155. Schmit, J.L., J. Appl. Phys., 41, 1970, 2876.
156. Schmit, J.L., Bowers, J.E., Appl. Phys. Lett., 35, 1979, 457.
157. xTe Improvement, Phase II. Final Technical Rep., Air Force Materials Laboratory Contract F33615-74-C-5041 (DDC AD B020360L).
158. Schmit, J.L., Stelzer, E.L., J. Appl. Phys., 40, 1969, 4865.
159. Schmit, J.L., Stelzer, E.L., J. Electron. Mater., 7, 1978, 65.
160. Schmit, J. L., Tobin, S. P., and Tredwell, T. J. (1979). Minority Carrier Lifetime and Diffusion Length in P-Type Mercury Cadmium Telluride. Final Rep., Air Force Materials Laboratory Contract F33615-77-C-5142, Rep. No. AFML-TR-79-4036 (DDC AD A071094).
161. Scott, W., Dyck, R.H., (eds.) Solid State Sensors Symp. Proc., 1970, 75–78 IEEE Catalog No. 70, C25-Sensor.
162. Scott, W., J. Appl. Phys., 43, 1972, 1055.
163. Scott, W., Hager, R.J., J. Appl. Phys., 42, 1971, 803.
164. Scott, M. W., and Kloek, A. E. (1973). PN Junctions in Mercury Cadmium Telluride, U.S. Patent 3,743,533.
165. Scott, W., Stelzer, E.L., Hager, R.J., J. Appl. Phys., 47, 1976, 1408.
166. Shanley, J.F., Flanagan, C.T., Proc. Soc. Photo-Opt. Instrum. Eng., 227, 1980, 123.
167. Shanley, J. F., and Perry, L. C. (1978a). Infrared Heterodyne Photodiode Development and Characterization. Final Rep., Ballistic Missile Defense Advanced Technology Center Contract DASG60-77-C-0081 (DDC AD B033680L).
168. Shanley, J.F., Perry, L.C., IEEE Int. Electron Device Meeting Tech. Digest, 1978, 424.
169. Shanley, J. F., Koehler, T., Lang, K., MacDonald, D., Peyton, B. J., and Wolczok, J. (1977). 10.6 Micrometer (Hg, Cd)Te Mixer/Detector Development: A Wideband Heterodyne Ladar Receiver. Final Rep., Ballistic Missile Defense Advanced Technology Center Contract (DASG60-75-C-0079) (DDC AD B020165L).
170. Shanley, J.F., Flanagan, C.T., Reine, M.B., Proc. Soc. Photo-Opt. Instrum. Eng., 227, 1980, 117.
171. Shappir, J., Konodny, A., IEEE Trans Electron Devices, ED-24, 1977, 1093.
172. Shockley, W., Bell Syst. Tech. J., 28, 1949, 435.
173. Shockley, W., Read, W.T. Jr., Phys. Rev., 87, 1952, 835.
174. Smith, R.A., “Semiconductors,”. 1978, Cambridge Univ. Press, London and New York 2nd ed.
175. Soderman, D.A., Proc. Nut. Electron. Conf., 26, 1970, 273.
176. Soderman, D. A. (1970b). Mercury Cadmium Telluride Detector. Final Tech. Rep., U.S. Army Electronics Command Contract DAAB07-69-C-0328 (DDC AD 880272).
177. Soderman, D.A., Pinkston, W.H., Appl. Opt., 11, 1972, 2162.
178. Sood, A.K., Tobin, S.P., Electron Device Lett., EDL-1, 1980, 12.
179. Sood, A. K., and Tredwell, T. J. (1978a). 8–14 Micrometer Photovoltaic Detectors. Final Rep., U.S. Army Night Vision and Electro-Optics Laboratory Contract DAAK70-76-C-0237 (DDC AD B037083L).
180. Sood, A.K., Tredwell, T.J., IEEE Int. Electron Device Meeting Tech. Digest, 1978, 434.
181. Sood, A. K., Marciniec, J. W., and Reine, M. B. (1979a). Moderate Temperature Detector Development. Final Rep. for NASA Contract NAS9-15250.
182. Sood, A.K., Marciniec, J.W., Reine, M.B., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), Vol 1, 1979, 171 (DDC AD B053886).
183. Sood, A. K., Marciniec, J. W., and Reine, M. B. (1979c). Final Rep., U.S. Naval Research Laboratory Contract N00173-78-C-0145.
184. Spears, D.L., Infrared Phys., 17, 1977, 5.
185. Spears, D.L., Freed, C., Appl. Phys. Lett., 23, 1973, 445.
186. Spears, D.L., Hoyt, C.D., M. I. T. Lincoln Laboratory Solid State Research Rep., #1, 1978, 1–5 (DDC AD A056715).
187. Spears, D.L., Kingston, R.H., Appl. Phys. Lett., 34, 1979, 589.
188. Spears, D.L., Harman, T.C., Melngailis, I., Freed, C., M. I. T. Lincoln Laboratory Solid State Research Rep., #2, 1973, 2–6 (DDC AD 766233).
189. Spears, D.L., Harman, T.C., Melngailis, I., M. I. T. Lincoln Laboratory Solid State Research Rep., #4, 1974, 5–7 (DDC AD A004763).
190. Sze, S.M., “Physics of Semiconductor Devices.”. 1969, Wiley, New York.
191. Tarr, N.G., Pulfrey, D.L., Solid State Electron., 22, 1979, 265.
192. Tauc, J., “Photo and Thermoelectric Effects in Semiconductors.”. 1962, Pergamon Press, New York.
193. Tennant, W. E. et al., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 239.
194. Terman, L.M., Solid State Electron., 5, 1962, 285.
195. Timberlake, A. B., and Soderman, D. A. (1972). Mercury Cadmium Telluride 10.6 Micron Photodiode. Semiannual Rep., U.S. Army Electronics Command Control DAAB07-71-C-0236 (DDC AD 741840).
196. xTe. BS/MS Thesis, M.I.T. Cambridge, Massachusetts.
197. Tobin, S.P., Schmit, J.L., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 45.
198. Tobin, S. P., Polla, D. L., and Sood, A. K. (1979). Extended Abstracts, Volume 79–2, Fall Meeting of the Electrochemical Society, pp. 1476–1418.
199. Tobin, S.P., Iwasa, S., Tredwell, T.J., IEEE Trans. Electron Devices, ED-27, 1980, 43.
200. Tongson, L.L., Knox, B.E., Sullivan, T.E., Fonash, S.J., J. Appl. Phys., 50, 1979, 1535.
201. Tredwell, T.J., Opt. Eng., 16, 1977, 237.
202. Tredwell, T. J., and Long, D. (1977). Detection of Long Wavelength Infrared Moderate Temperatures. Final Report, NASA Lyndon B. Johnson Space Center Contract NAS9-14180, 5S (NASA Accession No. N78-13876).
203. Turner, M.J., Rhoderick, E.H., Solid State Electron., 11, 1968, 291.
204. van der Ziel, A., Chenette, E.R., Adv. Electron. Electron Phys. 46 (1978), 313–383.
205. Van de Wiele, F. (1976). “Solid State Imaging” (P. G. Jespers, F. Van de Wiele and M. H. White, eds.), pp. 47–90. Noordhoff, Leyden.
206. van Vliet, K.M., Appl. Opt., 6, 1967, 1145.
207. van Vliet, K.M., IEEE Trans. Electron Devices, ED-23, 1976, 1236.
208. van Vliet, K.M., van der Ziel, A., IEEE Trans. Electron Devices, ED-24, 1977, 1127.
209. Vérié, C., Ayas, S., Appl. Phys. Lett, 10, 1967, 241.
210. Vérié, C., Granger, R., C. R. Acad. Sci. Paris, 261, 1965, 3349.
211. Vérié, C., Sirieix, M., IEEE J. Quantum Electron., QE-8, 1972, 180.
212. Voitsehovski, A.V., Broudny, V.N., Lilenko, Yu. V., Krivov, M.A., Petrov, A.S., Solid State Commun., 31, 1979, 105.
213. Vydyanath, H., and Nelson, D. (1981). To be published.
214. Vydyanath, H.R., Nelson, D.A., Lancaster, R.A., Roy, R.G., Proc. Meeting IRIS Specialty Group Infrared Detectors (U), 1, 1979, 29.
215. Wang, C. C. et al., Proc. Meeting IRIS Specialty Group on Infrared Detectors (U), 1, 1979, 210 (DDC AD B053886).
216. Watkins, T.B., Proc. Phys. Soc., 73, 1954, 59.
217. Weiler, M.H., Willardson, R.K., Beer, A.C., (eds.) “Semiconductors and Semimetals”, 16, 1981, Academic Press, New York, 119–191.
218. Wong, J.Y., IEEE Trans. Electron Devices, ED-27, 1980, 48.
219. Wong, T. T. S. (1974). Theoretical and Experimental Study of the Anomalous Hall Properties of (Hg, Cd)Te. BS-MS Thesis, M.I.T., Cambridge, Massachusetts.
220. Zozime, A., Drappier, H., Sella, C., Chaveau, M., Cohen-Solal, G., Le Vide, 175, 1975, 19.