Orbital photogalvanic effects in quantum-confined structures

Journal of Physics Condensed Matter

Volumn 22, Issue 35, 2010, Pages

  Karch, J ^a   Tarasenko, S A ^b   Olbrich, P ^a   Schonberger T ^a   Reitmaier, C ^a   Plohmann, D ^a   Kvon, Z D ^c   Ganichev, S D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CHANNEL; FREE CARRIER ABSORPTION; GATE VOLTAGES; HELICITIES; MONOCHROMATIC RADIATION; PHENOMENOLOGICAL THEORY; PHOTOGALVANIC EFFECTS; QUANTUM INTERFERENCE; QUANTUM-CONFINED STRUCTURES; RADIATION POLARIZATION; SILICON SURFACES; SILICON-BASED STRUCTURES; TERAHERTZ RADIATION;

ABSORPTION; TERAHERTZ WAVES;

RADIATION EFFECTS;

EID: 77957008509     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/35/355307     Document Type: Article

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