Minority-Carrier Transport in III–V Semiconductors

Semiconductors and Semimetals

Volumn 39, Issue C, 1993, Pages 193-258

  Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS;

III-V SEMICONDUCTORS;

EID: 77956974051     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62596-X     Document Type: Article

References (71)

1. Abram, R.A., Rees, G.J., Wilson, B.L.H., “Heavily Doped Semiconductors and Devices,”. Advances in Physics, 27, 1978, 799.
2. 1-xAs Homojunctions. Appl. Phys. Lett, 49, 1986, 725.
3. Ahrenkiel, R.K., Dunlavy, D.J., Greenberg, D., Schulpmann, J., Hamaker, H.C., MacMillan, H.F., Electron Mobility in p-GaAs by Time of Flight. Appl. Phys. Lett., 51, 1987, 776.
4. Asbeck, P., “Self-Absorption Effects on the Radiative Lifetime in GaAs-GaAlAs Double Heterostructures,”. J. Appl. Phys., 48, 1977, 820.
5. Bailbe, J.P., Marty, A., Rey, G., “Influence of Degeneracy on Behavior of Homojunction GaAs Bipolar Transistors,”. Electronics Lett., 20, 1984, 258.
6. Bardyszewski, W., Yevick, D., “Influence of Temperature on Electron Transport in Bipolar Devices,”. Appl. Phys. Lett., 54, 1989, 837.
7. Bennett, H.S., “High Dopant and Carrier Concentration Effects in Gallium Arsenide and Effective Intrinsic Carrier Concentrations,”. J. Appl. Phys., 60, 1986, 2866.
8. Bennett, H.S., Lowney, J.R., “Models for Heavy Doping Effects in Gallium Arsenide,”. J. Appl. Phys., 62, 1987, 521.
9. Beyzavi, K., Lee, K., Kim, D.M., Nathan, M.I., Wrenner, K., Wright, S.L., “Temperature Dependence of Minority-Carrier Mobility and Recombination Time in p-Type GaAs,”. Appl. Phys. Lett., 58, 1991, 1268.
10. Casey, H.C., Stern, F., “Concentration-Dependent Absorption and Spontaneous Emission of Heavily Doped GaAs,”. J. Appl. Phys., 47, 1976, 631.
11. Casey, H.C., Sell, D.D., Wecht, K.W., “Concentration Dependence of the Absorption Coefficient for n- and p-Type GaAs between 1.3 and 1.6 eV,”. J. Appl. Phys., 46, 1975, 250.
12. +-n GaAs Homojunction Barriers. J. Appl. Phys., 66, 1989, 273.
13. del Alamo, J.A., Swanson, R.M., “Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters,”. Solid-State Electron., 30, 1987, 1127.
14. DeMoulin, P.D., Lundstrom, M.S., “Projections of GaAs Solar Cell Performance Limits Based on 2-D Numerical Simulation,”. IEEE Trans. Electron Dev., 36, 1989, 897.
15. +p GaAs Solar Cells. Solar Cells, 20, 1987, 229.
16. Dodd, P.E., Lundstrom, M.S., “Minority Electron Transport in InP/InGaAs HBTs,”. Appl. Phys. Lett., 61, 1992, 465.
17. Dodd, P.E., Stellwag, T.B., Melloch, M.R., Lundstrom, M.S., “Surface and Perimeter Recombination in GaAs Diodes: An Experimental and Theoretical Investigation,”. IEEE Trans. Electron Dev., 38, 1991, 1253.
18. Dodd, P.E., Melloch, M.R., Lundstrom, M.S., “High-Gain, Low-Leakage GaAs Pseudo-HBTs for Operation in Reduced Temperature Environments,”. IEEE Electron Dev. Lett., 12, 1991, 629.
19. Dumke, W.P., “Spontaneous Radiative Recombination in Semiconductors,”. Phys. Rev., 105, 1957, 139.
20. Furuta, T., Tomizawa, M., “Velocity Electric Field Relationship for Minority Electrons in Highly Doped p-GaAs,”. Appl. Phys. Lett., 56, 1990, 824.
21. Gora, T., Williams, F., Thomas, D.G., (eds.) “Electronic States of Homogeneous and Inhomogeneous Mixed Semiconductors,” in II-VI Semiconducting Compounds, 1967, Benjamin, New York, 639.
22. Harmon, E.S., Melloch, M.R., Lundstrom, M.S., Lovejoy, M.L., “Experimental Determination of the Effects of Degenerate Fermi Statistics on Heavily p-Doped GaAs,”. Appl. Phys. Lett., 58, 1991, 1647.
23. Hayes, J.R., Capasso Malik, R.J., Gossard, A.C., Wiegmann, W., “Optimum Emitter Grading for Heterojunction Bipolar Transistors,”. Appl. Phys. Lett., 43, 1983, 949.
24. Ito, H., Ishibashi, T., “Minority-Electron Mobility in p-Type GaAs,”. J. Appl. Phys., 65, 1987, 5197.
25. 1-x Strained Layers. Solid-State Electron., 34, 1991, 453.
26. Jain, S.C., McGregor, J.M., Roulston, D.J., Balk, P., “Modified Simple Expression for Bandgap Narrowing in n-type GaAs,”. Solid-State Electron., 35, 1992, 639.
27. +-n GaAs Diodes. Appl. Phys. Lett., 52, 1988, 2255.
28. Klausmeier-Brown, M.E., Lundstrom, M.S., Melloch, M.R., “The Effect of Heavy Impurity Doping on AlGaAs/GaAs Bipolar Transistors,”. IEEE Trans. Electron Dev., 36, 1989, 2146.
29. Klausmeier-Brown, M.E., Melloch, M.R., Lundstrom, M.S., “Electrical Measurements of Bandgap Shrinkage in Heavily Doped p-Type GaAs,”. J. Electron. Materials, 19, 1990, 7.
30. −3. Appl. Phys. Lett., 56, 1990, 160.
31. Kroemer, H., “Quasi-electric and Quasi-magnetic Fields in Nonuniform Semiconductors,”. RCA Review, 1957, 332.
32. Kroemer, H., “Heterostructure Bipolar Transistors and Integrated Circuits,”. Proc. IEEE, 70, 1982, 13.
33. 1-xAs-GaAs Heterostructures. Jap. J. Appl. Phys., 16, 1977, 465.
34. Lee, S., Gopinath, A., Pachuta, S.J., “Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors,”. Electronics Lett., 27, 1991, 1551.
35. Levi, A.F.J., Yafet, Y., “Nonequilibrium Electron Transport in Bipolar Devices,”. Appl. Phys. Lett., 51, 1987, 42.
36. M.L. Lovejoy 1992 “Minority Carrier Diffusivity Measurements in III-V Semiconductors by the Zero-Field Time-of-Flight Technique,” Ph.D. thesis, Purdue University, School of Electrical Engineering, West Lafayette, Indiana.
37. +-GaAs. Jap. J. Appl. Phys., 30, 1991, L135.
38. Lovejoy, M.L., Melloch, M.R., Ahrenkiel, R.K., Lundstrom, M.S., “Measurement Considerations for Zero-Field Time-of-Fiight Studies of Minority Carrier Diffusion in III-V Semiconductors,”. Solid State Electron., 35, 1992, 251.
39. + -GaAs. Appl. Phys. Lett., 61, 1992, 2683.
40. Lowney, J.R., Bennett, H.S., “Majority and Minority Electron and Hole Mobilities in Heavily Doped GaAs,”. J. Appl. Phys., 69, 1991, 7102.
41. Lundstrom, Mark, Fundamentals of Carrier Transport., 1990, Addison-Wesley, Reading, Massachusetts.
42. Lundstrom, M.S., Schwartz, R.J., Gray, J.L., “Transport Equations for the Analysis of Heavily Doped Semiconductor Devices,”. Solid-State Electron., 24, 1981, 413.
43. Lundstrom, M.S., Klausmeier-Brown, M.E., Melloch, M.R., Ahrenkiel, R.K., Keyes, B.M., “Device-Related Material Properties of Heavily Doped GaAs,”. Solid-State Electron., 33, 1990, 693.
44. Marshak, A.H., “Transport Equations for Highly Doped Devices and Heterostructures,”. Solid-State Electron., 30, 1987, 1089.
45. Marshak, A.H., van Vliet, K.M., “Electrical Currents in Solids with Position-Dependent Band Structure,”. Solid-State Electron., 21, 1978, 417.
46. Marshak, A.H., van Vliet, K.M., “Carrier Densities and Emitter Efficiency in Degenerate Materials with Position-Dependent Band Structure,”. Solid-State Electron., 21, 1978, 429.
47. Marshak, A.H., Shrivastava, R., “Law of the Junction for Degenerate Material with Position-Dependent Band Gap and Electron Affinity,”. Solid-State Electron., 22, 1979, 567.
48. Nathan, M.I., Dumke, W.P., Wrenner, K., Tiwari, S., Wright, S.L., Jenkins, K.A., “Electron Mobility in p-GaAs,”. Appl. Phys. Lett., 52, 1988, 654.
49. Nelson, R.J., Sobers, R.G., “Minority-Carrier Lifetime and Internal Quantum Efficiency of Surface-Free GaAs,”. Appl. Phys. Lett. 49 (1978), 6103–6108.
50. Pantelides, S.T., Selloni, A., Car, R., ) “Energy Gap Reduction in Heavily Doped Silicon: Causes and Consequences,”. Solid-State Electron., 28, 1985, 17.
51. Partain, L.D., Kuryla, M.S., Fraas, L.M., McLeod, P.S., Cape, J.A., “A New Sequentially Etched Quantum-Yield Technique for Measuring Surface Recombination Velocity and Diffusion Lengths of Solar Cells,”. J. Appl. Phys., 61, 1987, 1987.
52. Patkar, M.P., Lundstrom, M.S., Melloch, M.R., “Transistor-Based Studies of Heavy Doping Effects in n-GaAs,”. Appl. Phys. Lett., 59, 1991, 1853.
53. Pritchard, R.L., Electrical Characterization of Transistors., 1967, McGraw-Hill, New York.
54. Ritter, D., Hamm, R.A., Feygenson, A., Panish, M.B., “Diffusive Base Transport in Narrow Base InP/GalnAs Heterojuncton Bipolar Transistors,”. Appl. Phys. Lett., 59, 1991, 3431.
55. Sadra, K., Maziar, C.M., Streetman, B.G., Tang, D.S., “Effects of Multiband Electron-Hole Scattering and Hole Wavefunction Symmetry on Minority-Electron Transport in GaAs,”. J. Appl. Phys., 66, 1989, 4791.
56. Schuelke, R.J., Lundstrom, M.S., “Numerical Analysis of Heteostructure Semiconductor Devices,”. IEEE Trans. Electron Dev., 30, 1983, 1151.
57. Shockley, W., Electrons and Holes in Semiconductors., 1959, Van Nostrand, New York.
58. Slater, D.B. Jr., Enquist, P.M., Najjar, F.E., Chen, M.Y., Hutchby, J.A., Morris, A.S., Trew, R.J., Experimental Values for the Hole Diffusion Coefficient and Collector Transit Velocity in P–n–p AlGaAs/GaAs HBTs. IEEE Electron Dev. Lett., 12, 1991, 54.
59. Slotboom, J.W., de Graaff, H.C., “Measurements of Bandgap Narrowing in Si Bipolar Transistors,”. Solid-State Electron., 29, 1976, 857.
60. Smith, A.C., Janak, J.F., Adler, R.B., Electronic Conduction in Solids., 1967, McGraw-Hill, New York.
61. Streit, D.C., Haflzi, M.E., Umemoto, D.K., Velebir, J.R., Tran, L.T., Oki, A.K., Kim, M.E., Wang, S.K., Kim, C.W., Sadwick, L.P., Hwu, R.J., “Effect of Exponentially Graded Base Doping on the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors,”. IEEE Electron Dev. Lett., 12, 1991, 194.
62. Sutherland, J.E., Hauser, J.R., ) “A Computer Analysis of Heterojunction and Graded Composition Solar Cells,”. IEEE Trans. Electron Dev., 24, 1977, 363.
63. Tobin, S.P., Vernon, S.M., Bajgar, C., Wojtczuk, S.J., Melloch, M.R., Keshavarzi, A., Stellwag, T.B., Vemkatesan, S., Lundstrom, M.S., Emery, K.A., “Assessment of MOCVD and MBE-Grown GaAs for High-Efficiency Solar Cell Applications,”. IEEE Trans. Electron Dev., 37, 1990, 469.
64. S.D. Tyagi K. Singh S.K. Ghandhi S.K. Borrego “Bandgap Narrowing in Heavily Doped n + Indium Phosphide,” Presented at the 22nd IEEE Photovoltaic Spec. Conf., Las Vegas, Nevada 1991 October 22–25, 1991.
65. van Roosbroeck, W., “Theory for the Flow of Electrons and Holes in Germanium and Other Semiconductors,”. Bell System Tech. J., 1950, 560–607.
66. van Roosbroeck, W., Shockley, W., “Photon-Radiative Recombination of Electrons and Holes in Germanium,”. Phys. Rev. 94 (1954), 1558–1560.
67. van Vliet, C.M., Marshak, A.H., “Wannier-Slater Theorem for Solids with Nonuniform Band Structure,”. Phys. Rev. B, 26, 1982, 6734.
68. Vernon, S.M., Tobin, S.P., Wojtczuk, S.J., Keavney, C.J., Bajgar, C., Sanfacon, M.M., Daly, J.T., Dixon, T.M., Solar Cells, 27, 1989, 107.
69. von Roos, O., “Influence of Radiative Recombination on Minority-Carrier Transport in Direct Band-Gap Semiconductors,”. J. Appl. Phys., 54, 1983, 1390.
70. Walukiewicz, W., Lagowski, J., Jastrzebski, L., Gatos, H.C., “Minority Carrier Mobility in p-Type GaAs,”. J. Appl. Phys., 50, 1979, 5040.
71. Yano, K., Nakazato, K., Miyamoto, M., Aoki, M., Shimohigashi, K., “A High-Current-Gain Low-Temperature Pseudo-HBT Utilizing a Sidewall Base Contact Structure (SICOS),”. IEEE Electron. Dev. Lett., 10, 1989, 452.