Device Applications of Strained-Layer Epitaxy

Semiconductors and Semimetals

Volumn 33, Issue C, 1990, Pages 73-138

  Schaff, William J ^a   Tasker, Paul J ^a   Foisy, Mark C ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; STRAINED LAYERS;

EID: 77956960781     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62652-6     Document Type: Article

References (129)

1. Adams, A.R., Electron. Lett., 22, 1986, 250.
2. Asbeck, P. (1989). Private communication.
3. Ashizawa, Y., Akbar, S., Schaff, W.J., Eastman, L.F., Fitzgerald, E.A., Ast, D.A., J. Appl. Phys., 46, 1988, 4065.
4. 0.47As field-effect transistors,”. Appl. Phys. Lett. 38 (1981), 817–819.
5. Berger, P.R., Chang, K., Battacharya, P., Singh, J., J. Appl. Phys., 53, 1988, 684.
6. Bour, D.P., Gilbert, D.B., Elbaum, L., Harvey, M.G., Appl. Phys. Lett., 53, 1988, 2371.
7. Brown, E.R., Goodhue, W.D., Sollner, T.C.L.C., J. Appl. Phys., 64, 1988, 1519.
8. Caldwell, P.J., Leavitt, R.P., Whisnant, J.K., Horst, S.C., Towner, F.J., “InGaAs/InAlGaAs Injection Lasers Grown on GaAs Substrates,”. Conf: on Lasers and Electro-Optics (Cleo), 1989, Baltimore, Maryland.
9. Camnitz, L. H. (1985). “Design Principles and Performance of Modulation-Doped Field-Effect Transistors for Low-Noise Microwave Amplification,” Ph.D. Thesis, Cornell University.
10. Camnitz, L. H., Tasker, P. J., Lee, H., van der Merwe, D., and Eastman, L. F. (1984). “Microwave chardcterizdtion of very high transconductance MODFET,” in IEDM Tech. Dig. 1984, 360–363.
11. 0.7As buffer layers,”. Inst Phys. Conf. Ser. 74 (1985), 333–338.
12. Camnitz, L.H., Tasker, P.J., Maki, P.A., Lee, H., Huang, J., Eastman, L.F., “The role of charge control on drift mobility in AlGaAs/GaAs MODFETs,”. Proc. IEEE Cornell Conference on Advanced Concepts in High-speed Devices and Circuits, 1985, 199–208.
13. Cappy, A., Carnez, B., Fauquembergues, R., Salmer, G., Constant, E., “Comparative potential performance of Si, GaAs, GalnAs, InAs submicrometer-gate FETs,”. IEEE Trans. Electron Devices ED-27 (1980), 2158–2160.
14. Cardi, E.A., Chang, T.Y., Goossen, K.W., Eastman, L.F., “Direct Demonstration of a Misfit Strain-Generated Electric Field in a [111] Growth Axis Zinc-Blende Heterost-ructure,”. Appl. Phys. Lett. 56 (1989), 659–661.
15. Chao, P.C., Palmateer, S.C., Smith, P.M., Mishra, U.K., Duh, K.H.G., Hwang, J.C.M., “Millimeter-wave low-noise high electron mobility transistors,”. IEEE Electron Devices Lett. EDL-6 (1985), 531–533.
16. Chao, P.C., Smith, P.M., Palmateer, S.C., Hwang, J.C.M., “Electron-beam fabrication of GaAs low-noise MESFETs using a new trilayer resist technique,”. IEEE Trans. Electron Devices ED-32 (1985), 1042–1046.
17. Chao, P.C., Tiberio, R.C., Duh, K.H.G., Smith, P.M., Ballingal, J.M., Lester, L.F., Lee, B.R., Jabra, A., Gifford, G.G., “0.1-μm gate-length pseudomorphic HEMTs,”. IEEE Electron Devices Lett. EDL-8 (1987), 489–491.
18. Daniels, R.R., Mactaggart, R., Abrokwah, J.K., Tufte, O.N., Shur Baek, J., Jenkins, P., “Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI,”. Tech. Dig. IEDM, 1986, 448–451.
19. Daniels, R.R., Ruden, P.P., Shur, M., Grider, D., Nohava, T.E., Arch, D.K., “Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistor with very high transconductance,”. IEEE Electron Devices Lett. EDL-9 (1988), 355–357.
20. Delagebeaudeuf, D., Linh, N.T., “Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET,”. IEEE Thans. Electron Devices ED-29 (1982), 955–960.
21. Drummond, T.J., Fischer, R.J., Kopp, W.F., Morkoç, H., Lee, K., Shur, M.S., “Bias dependence and light sensitivity of (Al,Ga)As/GaAs MODFETs at 77 K,”. IEEE Trans. Electron Devices ED-30 (1983), 1806–1811.
22. Enquist, P.M., Ramberg, L.P., Najjar, F.E., Schaff, W.J., Kavanagh, K.L., Wicks, G.W., Eastman, L.F., J. Crystal Growth 18 (1987), 378–382.
23. Fekete, D., Chan, K.T., Ballantyne, J.M., Eastman, L.F., Appl. Phys. Lett. 49 (1986), 1659–1660.
24. Fischer, R., Drummond, T.J., Kliem, J., Kopp, W., Henderson, T.S., Perrachione, D., Morkoç, H., “On the collapse of drain I-V characteristics in modulation-doped FETs at cryogenic temperatures,”. IEEE Trans. Electron Devices ED-31 (1984), 1028–1032.
25. Fischer, S.E., Waters, R.G., Fekete, D., Ballantyne, J.M., Chen, Y.C., Soltz, B.A., Appl. Phys. Lett., 54, 1989, 1861.
26. Fischer-Colbrie, A., Miller, J.N., Laderman, S.S., Rosner, S.J., Hull, R., J. Vac. Sci. Technol. B. 6 (1988), 620–624.
27. Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.G., Kirchner, P.D., Pettit, G.D., Woodall, J.M., J. Appl. Phys., 65, 1989, 2220.
28. Foisy, M. C., Huang, J. C., Tasker, P. J., and Eastman, L. F. (1987). “Modulation efficiency limited high-frequency performance of the MODFET,” in Picosecond Electronics and Optoelectronics II (F. J. Leonberger, C. H. Lee, F. Capasso, and H. Morkoç, eds.). Springer-Verlag, Berlin, pp. 181–183.
29. Foisy, M.C., Tasker, P.J., Hughes, B., Eastman, L.F., “The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET,”. IEEE Trans. Electron Devices ED-35 (1988), 871–878.
30. Fritz, I.J., Picraux, S.T., Dawson, L.R., Drummond, T.J., Laidig, W.D., Anderson, N.G., Appl. Phys. Lett., 46, 1985, 967.
31. Fritz, I.J., Drummond, T.J., Osbourn, G.C., Schirber, J.E., Jones, E.D., Appl. Phys. Lett., 48, 1986, 1678.
32. Fritz, I.J., Doyle, B.L., Schirber, J.E., Jones, E.D., Dawson, L.R., Drummond, T.J., Appl. Phys. Lett., 49, 1986, 581.
33. Gavrilovic, P., Meehan, K., Stutius, W., Williams, J. E., and Zarrdbi, J. H. (1988). 11th IEEE Intl. Semiconductor Laser Conf., Boston, MA.
34. Gray, J.L., Lundstrom, M.S., “Numerical solution of Poisson's equation with application of C-V analysis of III-V heterojunction capacitors,”. IEEE Trans. Electron Devices ED-32 (1985), 2102–2109.
35. Grebene, A.B., Ghandhi, S.K., “General theory for pinched operation of the junction-gate FET,”. Solid-state Electronics 12 (1969), 573–589.
36. 1-yAs (on InP) quantum-well MODFETs,” Ph.D. Thesis Cornell University.
37. Gourley, P.L., Fritz, I.J., Dawson, L.R., Appl. Phys. Lett., 52, 1988, 377.
38. Hendel, R.H., Pei, S.S., Kiehl, R.A., Tu, C.W., Feuer, M.D., Dingle, R., “A 10-GHz frequency divider using selectively doped heterostructure transistors,”. IEEE Electron Devices Lett. EDL-5 (1984), 406–408.
39. Hirakawa, K., Sakaki, H., Yoshino, J., “Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric field,”. Appl. Phys. Lett. 45 (1984), 253–255.
40. Hikosaka, K., Sasa, S., Harada, N., Kuroda, S., “Current-gain cutoff frequency comparison of InGaAs HEMTs,”. IEEE Electron Deoices Lett. EDL-9 (1988), 241–2438.
41. Hong, W.P., Derosa, F., Bhat, R., Allen, S.J., Hayes, J.R., Bhattacharya, P., Inst. Phys. Conf Ser. 96 (1989), 237–242.
42. Huang, K.F., Tai, K., Jewell, J.L., Fischer, R.J., McCall, S.L., Cho, A.Y., Appl. Phys. Lett., 54, 1989, 2192.
43. Inata, T., Muto, S., Nakata, Y., Sasa, S., Fujii, T., Hiyamiza, S., Japan J. Appl. Phys. 26 (1987), L1332–L1334.
44. Ishibashi, T., Yamauchi, Y., “A possible near-hallistic collection in an AlGaAs/GaAs HBT with a Modified Collector Structure,”. IEEE Trans. Electron Devices 35 (1988), 401–404.
45. Jaffe, M., Oh, J.E., Pamulapati, J., Singh, J., Bhattacharya, P., Appl. Phys. Lett. 54 (1989), 2345–2346.
46. Jones, E.D., Lyo, S.K., Fritz, I.J., Klem, J.E., Schriber, J.E., Tigges, C.P., Drummond, T.J., Appl. Phys. Lett., 54, 1989, 2227.
47. Jones, E.D., Lyo, S.K., Klem, J.F., Schriber, J.E., Tigges, C.P., “Simultaneous measurement of the conduction and valence-hand masses in strained-layer structures,”. Inst Phys. Conf. Ser. 96 (1989), 241–243.
48. Joyce, M.J., Gal, M., Tann, J., “Observation of Interface Defects in Strained InGaAs-GaAs by Photoluminescence Spectroscopy,”. J. Appl. Phys., 65, 1989, 1377.
49. Kavanagh, K.L., Capano, M.A., Hobbs, L.W., Barbour, J.C., Maree, P.M.J., Schaff, W.J., Mayer, J.W., Pettit, D., Woodall, J.M., Stroscio, J.A., Feenstra, R.M., J. Appl. Phys., 64, 1988, 4843.
50. Ketterson, A., Moloney, M., Masselink, W.T., Peng, C.K., Klem, J., Fisher, R., Kopp, W., Morkoç, H., “High transconductance in InGaAs/AlGaAs pseudomorphic modulation-doped lield-effect transistors,”. IEEE Electron Devices Lett. EDL-6 (1985), 628–630.
51. Kim, B., Matyi, R.J., Wurtele, M., Bradshaw, K., Tserng, H.Q., “Millimeter-wave AlGaAs/InGaAs/GaAs quantum-well power MISFET,”. Tech. Dig. IEDM, 1988, 168–171.
52. Kolbas, R.M., Anderson, N.G., Laidig, W.D., Sin, Y., Lo, Y.C., Hsieh, K.Y., Yang, Y.J., IEEE J. Quantum Electron., QE-24, 1988, 1605.
53. Kroemer, H., Appl. Phys. Lett., 46, 1985, 504.
54. 0.52As HEMT,”. Electron. Lett., 1988, 1571–1572.
55. Kuang, J.B., Tasker, P.J., Wang, G.W., Chen, Y.K., Eastman, L.F., Aina, A.O., Hier, H., Fathimulla, A., “Kink effect in submicrometer-gate MBE-grown InAlAs/ InGaAs/InAlAs heterojunction MESFETs,”. IEEE Electron Devices Lett. EDL-9 (1988), 630–632.
56. Kuo, C.P., Vong, S.K., Cohen, R.M., Stringfellow, G.B., J. Appl. Phys., 57, 1985, 5428.
57. Lee, C.P., Hou, D., Lee, S.J., Miller, D.L., Anderson, R.J., “Ultra high-speed digital integrated circuits using GaAs/GaAlAs high electron mobility transistors,”. GaAsIC Symp. Tech. Dig., 1983, 162–165.
58. Mailhiot, C., Smith, D.L., “Modulation of Internal Piezoelectric Fields in Strained-Layer Superlattices Grown Along the [111] Orientation,”. J. Vac. Sci. Technol. A7 (1989), 609–615.
59. Major, J.S., Guido, L.J., Hsieh, K.C., Holonyak, N., Stutius, W., Gavrilovic, P., Williams, J.E., Appl. Phys. Leit., 54, 1989, 913.
60. Mandeville, P. (1989). Unpublished.
61. Massies, J., Sauvage-Simkin, M., Appl. Phys. Lett., 43, 1983, 8465.
62. Matthews, J.W., Blakeslee, A.E., J. Cryst. Growth, 27, 1974, 118.
63. Matthews, J.W., Blakeslee, A.E., J. Crystal Growth 32 (1976), 265–273.
64. Miller, D.A.B., Weiner, J.S., Chemla, D.S., IEEE J. Quantum Electron., QE-22, 1986, 1816.
65. Mishra, U.K., Palmateer, S.C., Chao, P.C., Smith, P.M., Hwang, J.C.M., “Microwave performance of a 0.25-μm gate-length high electron mobility transistors,”. IEEE Electron Devices Lett. EDL-6 (1985), 142–145.
66. 0.62As pseudomorphic HEMTs,”. Tech. Dig. IEDM, 1988, 180–183.
67. Mishra, U.K., Brown, A.S., Rosenbaum, S.E., Hooper, C.E., Pierce, M.W., Delaney, M.J., Vaughn, S., White, K., “Microwave performance in AlInAs-GaInAs HEMTs with 0.2- and 0.1 μm gate-length,”. IEEE Electron Devices Lett. EDL-9 (1988), 647–649.
68. Mishra, U.K., Jensen, J.F., Brown, A.S., Thompson, M.A., Jelloian, L.M., Beaubien, R.S., “Ultra-high-speed digital Circuit performance in 0.2-μm gate-length alInAs/GaInAs HEMT technology,”. IEEE Electron Devices Lett. EDL-9 (1988), 482–484.
69. Moll, N., Hueschen, M.R., Fisher-Colbrie, A., “Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs,”. IEEE Trans. Electron Devices ED-35 (1988), 879–886.
70. Moloney, M.J., Ponse, F., Morkoc, H., “Gate Capacitance-Voltage Characterization of MODFETs: Its Effect on Transconductance,”. IEEE Trans. Electron Devices ED-32 (1985), 1675–1684.
71. Muneketa, H., Segmuller, A., Chang, L.L., “Inhomogeneous Lattice Distortion in the Heteroepitaxy of InAs on GaAs,”. Appl. Phys. Lett. 51 (1987), 587–589.
72. Ng, G.I., Weiss, M., Pavlidis, D., Tutt, T., Bhattacharya, P., Chen, C.Y., Inst. Phys. Conf Ser. 96 (1989), 465–470.
73. Nguyen, L. D. (1989). “Realization of Ultra-High Speed Modulation-Doped Field Effect Transistors,” Ph.D. Dissertation, Cornell University.
74. Nguyen, L. D., Foisy, M. C., Tasker, P. J., Schaff, W. J., Lepore, A. N., and Eastman, L. F. (1987a). “Carrier deconfinement limited velocity in pseudomorphic AIGaAs/InCaAs modulation-doped field-effect transistors (MODFETs),” in Proc. IEEE/Cornell Conf. on Advanced Concepts in High Speed Semicond. Dev. & Ckts. 60–69.
75. Nguyen, L.D., Tasker, P.J., Schaff, W.J., “Comments on 'A new low-noise AIGaAs/GaAs 2DEG FET with a surface undoped layer',”. IEEE Trans. Electron Devices, ED-34, 1987, 1187.
76. T over 120 GHz,”. IEEE Electron Devices Lett. EDL-9 (1988), 370–374.
77. Nguyen, L.D., Schaff, W.J., Tasker, P.J., Lepore, A.N., Palmateer, L.F., Foisy, M.C., Eastman, L.F., “Charge control, DC, and RF performance of a 0.35-μm pseudomorphic AIGaAs/InGaAs modulation-doped field-effect transistor,”. IEEE Trans. Electron Devices ED-35 (1988), 139–143.
78. Nguyen, L.D., Tasker, P.J., Radulescu, D.C., Eastman, L.F., “Design, fabrication and characterization of ultra high speed AIGaAs/InGaAs MODFETs,”. Tech. Dig. IEDM, 1988, 176–178.
79. Nguyen, L. D., Tasker, P. J., Radulescu, D. C., and Eastman, L. F. (1989). “Characterization of ultra-high speed pseudomorphic,” Submitted to IEEE Trans. Electron Devices.
80. Nishii, K., Matsuno, T., Ishikawa, O., Yagita, H., Inoue, K., “Nova1 high-performance N-AIGaAs/InGaAs/N-AlGaAs pseudomorphic double-heterojunction modulation-doped FETs,”. Japan J. of Appl. Phys. 27 (1988), 2216–2218.
81. T of 110 GHz,”. IEEE Electron Deoice Lett. 10 (1989), 30–32.
82. Offsey, S.D., Schaff, W.J., Tasker, P.J., Braddock, W.D., Eastman, L.F., “Microwave performance of GaAs-AIGaAs and strained-layer InGaAs-GaAs-AICaAs graded-index separate confinement single quantum well lasers,”. 12th Biennial IEEE/CorneN Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1989, Ithaca, New York.
83. Ohari, T., Takechi, M., Takikawa, M., Komeno, J., Inst. Phys. Conf Ser. 96 (1989), 131–134.
84. Ohno, H., Luo, J.K., Matsuzaki, K., Hasegawa, H.M., Appl. Phys. Lett., 54, 1989, 36.
85. 1-xAs/GaAs modulation-doped structures,”. Japan J. Appl. Phys. 26 (1987), 539–542.
86. Olsen, G.H., Neuse, C.J., Smith, R.T., J. Appl. Phys., 49, 1978, 5523.
87. 0.53As/InP MODFETs,”. Electron. Lett. 23 (1987), 53–55.
88. Pearsall, T.P., “Two-dimensional electronic systems for high-speed device applications,”. Surface Sci. 142 (1984), 529–544.
89. 0.53As heterojunction field effect transistor,”. IEEE Electron Devices Lett. EDL-4 (1983), 5–8.
90. Ponse, F., Masselink, W.T., Morkoc, H., “The quasi-Fermi level bending in the MODFETs and its effect on the FET transfer characteristics,”. IEEE Trans. Electron Devices ED-32 (1985), 1017–1023.
91. Price, G.L., Appl. Phys. Lett., 53, 1988, 1288.
92. Radulescu, D. C. (1988) “Molecular-Beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/Indium Gallium Arsenide Single Quantum-Well Modulation-Doped Field-Effect Transistor Structures,” Ph.D. Thesis, Cornell University.
93. Radulescu, D.C., Schaff, W.J., Eastman, L.F., Ballingall, J.M., Ramseyer, G.O., Hersee, S.D., “Influence of substrate temperature and In As mole fraction on the incorporation of indium during molecular beam epitaxial growth of InGaAs single quantum-wells on GaAs,”. J. Vac. Sci. Technol. B 7 (1989), 111–115.
94. Ralston, J.D., Schaff, W.J., Bour, Eastman, D.P.L.F., “Room-Temperature Exciton Electroabsorption in Partially Intermixed GaAs/AIGaAs Quantum Well Waveguides,”. Appl. Phys. Lett. 54 (1989), 534–536.
95. Rogers, D.L., Woodall, J.M., Pettit, G.D., McInturff, D., “High-speed 1.3 μm GaInAs Detectors Fabricated on GaAs Substrates,”. IEEE Electron Dev. Lett. 9 (1989), 515–517.
96. 0.85As/GaAs pseudomorphic single quantum well HEMT,”. IEEE Electron Devices Lett. EDL-6 (1985), 491–493.
97. Saunier, P., Matyi, R. J., and Bradshaw, K. (1988). “A doubled-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz,”IEEE Electron Devices Lett. EDL-9, in Proc IEEE/Cornell Conference on Advunced Concepts in High Speed Semiconductor Deuices and Circuits, 189–198.
98. Schaff, W.J., Eastman, L.F., “Superlattice Buffers for GaAs Power MESFETs Grown by MBE,”. J. Vac. Sci. Technol. B2 (1984), 265–268.
99. Schaff, W.J., Kavanagh, K.L., Batson, P.E., Kirchner, P., Woodall, J.M., Mayer, J.W., “Capacitance Characterization of GalnAs Grown on GaAs by MBE,”. Electronic Materiuls Conference, 1986, Univ. of Massachusetts, Amherst, Massachusetts.
100. Schaff, W.J., Eastman, L.F., “MBE Growth and Materials and Device Characterization of Strained Layer GaInAs/GaAs for Application to MODFETs,” E-MRS Meeting, XVI, 1987, Les Editions de Physique, Paris, 295–301.
101. 0.83As Power MESFETs on GaAs (100) Substrates,”. Microwave und Optical Tech. Lefts. 2 (1989), 153–155.
102. Smith, F.W., Calawa, A.R., Chen, C.L., Manfra, M.J., Mahoney, L.J., Electron Dev. Lett., 9, 1988, 77.
103. Smith, P.M., Chao, P.C., Mishra, U.K., Palmateer, S.C., Duh, K.H.G., Hwang, J.C.M., “Millimeter wave power performance of 0.25 μm HEMTs and GaAs FETs,”. Proc. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1985, 189–198.
104. Smith, P.M., Chao, P.C., Lester, L.F., Smith, R.P., Lee, B.R., Ferguson, D.W., Jabra, A.A., Ballingall, J.M., Duh, K.H.G., “InGaAs pseudomorphic HEMTs for millimeter wave power applications,”. Tech. Dig. MTT Symposium, 1988, 927–930.
105. Strid, E.W., Gleason, K.R., “Calibration methods for microwave wafer probing,”. Tech. Dig. Monolithic Circuit Symposium, 1984, 78–82.
106. Stutius, W., Gavrilovic, P., Williams, J.E., Meehan, K., Zarrabi, J.H., Electron. Lett., 24, 1988, 1493.
107. Suemune, I., Coldren, L.A., Yamanishi, M., Kan, Y., Appl. Phys. Lett., 53, 1978, 1378.
108. T of FET devices from measured microwave data,” † †th Workshop on Compound Semicond. Dev. and Integrated Ckts., Grainau, West Germany.
109. T of FET devices from measured microwave data,”. Wocsemmad, 1987, Hilton Head Island, South Carolina.
110. Tasker, P.J., Hughes, B., “Bias dependence of the intrinsic model element values at microwave frequencies,”. IEEE Trans. Electron Devices ED-36 (1989), 2267–2273.
111. Tsao, J.Y., Dodson, B.W., Appl. Phys. Lett. 53 (1988), 848–850.
112. Turner, J., Wilson, B., “Implications of Carrier Velocity Saturation in a Gallium Arsenide Field-Effect Transistor,”. Proc. 1968 Symp. GaAs, Inst. Phys. Conf. Series 7 (1969), 195–204.
113. Upton, M.A.G., Smith, P.M., Chao, P.C., “HEMT low noise amplifier for Ka-band,”. Tech. Dig. MTT Symposium, 1987, 1007–1010.
114. Vawter, G.A., Myers, D.R., Brennan, T.M., Hammons, B.E., Hohimer, J.P., IEEE Photon. Tech. Lett., 1, 1990, 153.
115. Vinter, B., “Subbands and charge control in a two-dimensional electron gas field-effect transistor,”. Appl. Phys. Lett. 44 (1984), 307–309.
116. Wang, G.W., Chen, Y.K., Eastman, L.F., Whitehead, B., “Reduction of gate resistance in tenth-micron gate MODFETs for microwave applications,”. Solid-state Electron. 31 (1988), 1247–1250.
117. Watanabe, Y., Kakjii, K., Asada, Y., Odani, K., Mimura, T., Abe, M., “A high-speed HEMT 1.5K gate array,”. IEEE Trans. Electron Devices ED-34 (1987), 1253–1258.
118. Whaley, G.J., Cohen, P.I., J. Vac. Sci. Tech. B, 6, 1988, 625.
119. Wie, C.R., J. Appl. Phys., 65, 1989, 2267.
120. Williams, R.E., Shaw, D.W., “Graded channel FETs: improved linearity and noise figure,”. IEEE Trans. Electron Devices, ED-25, 1978, 600.
121. Wood, C.E.C., Singer, K., Ohashi, T., Dawson, L.R., Noreika, A.J., J. Appl. Phys., 54, 1983, 2732.
122. Woodall, J.M., Pettit, G.D., Jackson, T.N., Lanza, C., Kavanaugh, K.L., Meyer, J.W., Phys. Rev. Lett., 51, 1983, 1783.
123. Yahlonovitch, E., Kane, E.O., J. Lightwave Technol., LT-4, 1986, 961.
124. Yau, E.T., Watkins, S.K., Wang, K., Klatskin, B., “A four stage V-band MOCVD HEMT amplifier,”. Tech. Dig. MTT Syrnposiurn June, 1987, 1015–1018 ††††.
125. York, P.K., Beernink, K.J., Fernandez, G.E., Coleman, J.J., “InGaAs/GaAs Strained Layer Quantum Well Heterostructure Lasers and Laser Arrays by Metalogranic Chemical Vapor Phase Deposition.”. Conf. on Lasers and Electro-Optics, 1989, Baltimore, Maryland.
126. Zipperian, T. E. Private communication.
127. 0.8As/GaAs, Modulation-doped, strained-layer surerlattice field-effect transistor,”. Tech. Dig. IEDM, 1983, 696–699.
128. Zipperian, T.E., Drummond, T.J., Fritz, I.J., “Operation of a p-channel GaAs/(In, Ga)As, strained quantum well field-effect transistor at 4K,”. Proc. IEEE Cornell Conference on Advanced Concepts in High Speed Devices and Circuits, 1987, 80–88.
129. Zipperian, T.E., Jones, E.D., Dodson, B.W., Klem, J.F., Gourley, P.F., Plut, T.A., “A study of the thermal stability of (In, Ga)As strained quantum well structures as a function of overlayer thickness,”. Inst. Phys. Conf. 96 (1989), 365–370.