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Volumn 108, Issue 5, 2010, Pages

Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)/poly(3- hexylthiophene)/Al device

(6) Lee, Yeon Il a,b Youn, Jun Ho a,b Ryu, Mi Sun b Kim, Jungho b Jang, Jin b Moon, Hie Tae a,c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Advanced Biometric Research Center (South Korea)

c Korea Institute for Advanced Study (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BULK TRAPS; DENSITY OF LOCALIZED STATE; ELECTRICAL PROPERTY; ETHYLENEDIOXYTHIOPHENES; IMPEDANCE SPECTROSCOPY; POLY (3-HEXYLTHIOPHENE); POLY(STYRENE SULFONATE); SPACE-CHARGE-LIMITED CURRENT; STEP-BY-STEP METHOD;

ANNEALING; ELECTRIC PROPERTIES; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

HOLE MOBILITY;

EID: 77956862926 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475645 Document Type: Article

Times cited : (8)

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