Enhancement of magnetoresistance by hydrogen ion treatment for current-perpendicular-to-plane giant magnetoresistive films with a current-confined-path nano-oxide layer

Applied Physics Letters

Volumn 97, Issue 11, 2010, Pages

  Yuasa, H ^a   Hara, M ^a   Murakami, S ^a   Fuji, Y ^a   Fukuzawa, H ^a   Zhang, K ^b   Li, M ^b   Schreck, E ^b   Wang, P ^b   Chen, M ^b  

^a TOSHIBA CORPORATION   (Japan)

^b Headway Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; CPP-GMR; CURRENT PERPENDICULAR TO PLANE; GIANT MAGNETORESISTIVE; HYDROGEN IONS; MAGNETIC LAYERS; MAGNETORESISTIVE; MR RATIO; NANO-OXIDE LAYER; OXYGEN REDUCTION; REDUCTION PROCESS;

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTROLYTIC REDUCTION; HYDROGEN; MAGNETIC FIELD EFFECTS; MAGNETIC RECORDING; MAGNETOELECTRONICS; OXIDE FILMS; OXYGEN; TOMOGRAPHY;

GIANT MAGNETORESISTANCE;

EID: 77956831558     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3486117     Document Type: Article

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