Point-defect study from low-temperature photoluminescence of CdGa 2 Se4 layers through the postannealing in various ambient

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  You, S H ^a   Hong, K J ^a   Jeong, T S ^b   Youn, C J ^b  

^a Chosun University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; BAND DIAGRAMS; BAND GAPS; DEFECT STUDY; HOT-WALL EPITAXY; LOW TEMPERATURE PHOTOLUMINESCENCE; NATIVE DEFECT; POST ANNEALING; RECOMBINATION PROCESS;

DEFECTS; EPITAXIAL GROWTH; GALLIUM; PHOTOLUMINESCENCE; POINT DEFECTS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77956831551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481347     Document Type: Article

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