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Volumn 54, Issue C, 1998, Pages 457-484

Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques

Author keywords

[No Author keywords available]

Indexed keywords

DX CENTERS; HIGH PRESSURE STUDY;

EID: 77956670249     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)60234-3     Document Type: Article
Times cited : (2)

References (59)
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    • Lang D.V. In: Pantelides S.T. (Ed). Deep Centers in Semiconductors (1985), Gordon and Breach, New York 489
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    • Lang, D.V.1
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    • (1990) Physics of the DX Centers in AIGaAs Alloys
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    • 35949009927 scopus 로고
    • Phys. Rev. B 39 (1989) 10366
    • (1989) Phys. Rev. B , vol.39 , pp. 10366
  • 47
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    • Anastassakis E.M., and Joannopu-olos J.D. (Eds), World Scientific, Singapore
    • In: Anastassakis E.M., and Joannopu-olos J.D. (Eds). Proc. 20th Int. Conf. Phys. Semiconductors 1 (1990), World Scientific, Singapore 509
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  • 50
    • 77956702567 scopus 로고    scopus 로고
    • For a discussion on the theory of the D° state see, for example, J. Dabrowski and M. Scheffler, inDefects in Semiconductors 16, Materials Science Forum, 83-87 (Trans Tech Publ., Switzerland, 1992), p. 735. For discussions on experimental results see, for example, T. Suski inDefects in Semiconductors 17, Materials Science Forum 143-147 Trans Tech Publ., Switzerland, 1994, p. 975.
    • For a discussion on the theory of the D° state see, for example, J. Dabrowski and M. Scheffler, inDefects in Semiconductors 16, Materials Science Forum, 83-87 (Trans Tech Publ., Switzerland, 1992), p. 735. For discussions on experimental results see, for example, T. Suski inDefects in Semiconductors 17, Materials Science Forum 143-147 (Trans Tech Publ., Switzerland, 1994, p. 975.
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    • Lockwood D.J. (Ed), World Scientific, Singapore
    • In: Lockwood D.J. (Ed). Proc. 22nd Int. Conf. Phys. Semiconductors (1994), World Scientific, Singapore 2303
    • (1994) Proc. 22nd Int. Conf. Phys. Semiconductors , pp. 2303
  • 55
    • 36049058374 scopus 로고
    • Phys. Rev. 168 (1968) 867
    • (1968) Phys. Rev. , vol.168 , pp. 867
  • 57
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    • See, for example, J. A. Wolk. W. Walukiewicz, M. L. Thewalt, and E. E. Haller,Phys. Rev. Lett.68, 3619 (1992) for a description of the infrared vibrational study and J. Zeman, M. Zigone. and G. Martinez.Phys. Rev.B51, 1755 (1995) for a review of the Raman investigation of the DX center, both under pressure inside the DAC.
    • See, for example, J. A. Wolk. W. Walukiewicz, M. L. Thewalt, and E. E. Haller,Phys. Rev. Lett.68, 3619 (1992) for a description of the infrared vibrational study and J. Zeman, M. Zigone. and G. Martinez.Phys. Rev.B51, 1755 (1995) for a review of the Raman investigation of the DX center, both under pressure inside the DAC.
  • 58
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    • See. for example
    • See. for example.
  • 59
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    • for a study of the pressure dependence of the Pb center at the (111) Si-SiO2 interface
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    • Johnson, N.M.1    Shan, W.2    Yu, P.Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.