Microwave power limiting devices based on the semiconductor-metal transition in vanadium-dioxide thin films

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 9, 2010, Pages 2352-2361

  Givernaud, Julien ^a   Crunteanu, Aurelian ^a   Orlianges, Jean Cristophe ^a   Pothier, Arnaud ^a   Champeaux, Corinne ^a   Catherinot, Alain ^a   Blondy, Pierre ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

Coplanar waveguide (CPW) waveguide; microwave (MW) limiters; power dividers and combiners; semiconductormetal transition (SMT); vanadium dioxide

Indexed keywords

COPLANAR WAVEGUIDE (CPW) WAVEGUIDE; FABRICATED DEVICE; LOW LOSS; METAL STATE; MICROWAVE POWER; NOVEL CONCEPT; POWER DIVIDER; POWER LIMITING; PROTECTION CIRCUITS; SEMICONDUCTOR-METAL TRANSITION; SEMICONDUCTOR-TO-METAL TRANSITIONS; THRESHOLD POWER; VANADIUM DIOXIDE;

MICROWAVES; SEMICONDUCTOR DEVICES; THIN FILMS; VANADIUM; VANADIUM ALLOYS;

COPLANAR WAVEGUIDES;

EID: 77956610687     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2057172     Document Type: Article

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