A 600V super low loss IGBT with advanced micro-P structure for the next generation IPM

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 379-382

  Momose, M ^a   Kumada, K ^a   Wakimoto, H ^a   Onozawa, Y ^a   Nakamori, A ^a   Sekigawa, K ^a   Watanabe, M ^a   Yamazaki, T ^a   Fujishima, N ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR EMITTERS; GATE FIELD; INTELLIGENT POWER MODULE; LOW LOSS; MILLER CAPACITANCE; ON-STATE VOLTAGE DROP; P-STRUCTURES; POWER DISSIPATION; SAFE OPERATING AREA; SATURATION VOLTAGE; TOTAL POWER DISSIPATION; TRADE-OFF RELATIONSHIP;

DROPS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; VOLTAGE CONTROL;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 77956568849     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Laska, M. Münzer, F. Pfirsch, C. Shaeffer and T. Schmidt, "The Field Stop IGBT (FS IGBT) - A New Power Device Concept with a grate improvement Potential", in Proc.12th ISPSD, pp.355-358, June 2000.
2. Y. Onozawa, H. Nakano, M. Otsuki, K. Yoshikawa, T. Miyasaka and Y. Seki, " Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss" in Proc. 19th ISPSD, pp.13-16, June 2007.
3. H. Nakano, Y. Onozawa, R. Kawano, T. Yamazaki and Y. Seki, "600V trench-gate FS-IGBT with Micro-P structure", Proceedings of ISPSD2009, pp.132-135.
4. M. Kudoh, M. Otsuki, S. Momose, T. Yamazaki, T. Fujihira, and K. Sakurai, "Current Sensing IGBT Streucture with Impreved Accuracy", Proceedings of ISPSD 1995, pp.119-122.
5. M. Otsuki, Y. Onozawa, H. Kanemaru, Y. Seki, and T. Matsumoto, "A Study on the Short-Circuit Capability of Field-Stop IGBTs", Proceedings of IEEE Trans. Electron. Devices, vol. 50, no. 6, pp.1525-1531, June.2003.