Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 622, Issue 1, 2010, Pages 113-119

  Luryi, S ^a   Kastalsky, A ^a   Gouzman, M ^a   Lifshitz, N ^a   Semyonov, O ^a   Stanacevic, M ^a   Subashiev, A ^a   Kuzminsky, V ^a   Cheng, W ^a   Smagin, V ^a   Chen, Z ^a   Abeles, J H ^b   Chan, W K ^b   Shellenbarger, Z A ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

InGaAsP photodiodes; InP epitaxy; Semiconductor scintillator

Indexed keywords

EPITAXIALLY GROWN; INGAASP; INGAASP PHOTODIODES; INGAASP/INP; INP; LOW LEAKAGE; PHOTORECEIVERS; PIN PHOTODIODE; RADIATION TESTING; READOUT CIRCUITRY; REVERSE BIAS; ROOM TEMPERATURE; SEMICONDUCTOR SCINTILLATOR;

DIODES; EPITAXIAL GROWTH; LIGHT; PHOTODIODES; SCINTILLATION; SCINTILLATION COUNTERS;

SEMICONDUCTOR DIODES;

EID: 77956466725     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.07.042     Document Type: Article

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