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Journal of Alloys and Compounds

Volumn 506, Issue 2, 2010, Pages 678-682

Semiconducting properties of Ge-doped BaSnO3 ceramic

(2) Köferstein, Roberto a Yakuphanoglu, Fahrettin b

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

b FIRAT UNIVERSITY (Turkey)

Author keywords

Electrical conductivity; Optical properties; Perovskite; Sintering

Indexed keywords

BAND GAPS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; RATE OF CHANGE; REFLECTANCE SPECTRUM; SEMI-CONDUCTING PROPERTY; SEMICONDUCTOR BEHAVIOR; SINTERING TEMPERATURES; WIDE-BAND-GAP SEMICONDUCTOR;

CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY GAP; GERMANIUM; OPTICAL BAND GAPS; PEROVSKITE; SINTERING;

OPTICAL PROPERTIES;

EID: 77956459409 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.07.041 Document Type: Article

Times cited : (31)

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