A high efficiency broadband class-E power amplifier using a reactance compensation technique

IEEE Microwave and Wireless Components Letters

Volumn 20, Issue 9, 2010, Pages 507-509

  Lin, Chi Hsien ^a   Chang, Hong Yeh ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Enhancement depletion pseudomorphic high electron mobility transistor (E D PHEMT); high efficiency; power amplifier (PA); reactance compensation

Indexed keywords

1DB COMPRESSION POINT; BROAD BANDWIDTHS; CLASS E; CLASS-E POWER AMPLIFIERS; COMPENSATION COMPONENT; COMPENSATION TECHNIQUES; ENHANCEMENT/DEPLETION-PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS; FULLY INTEGRATED; HIGH EFFICIENCY; LOAD NETWORK; POWER-ADDED EFFICIENCY; REACTANCE COMPENSATION;

BROADBAND AMPLIFIERS; ELECTRON MOBILITY; POWER AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956394807     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2010.2056675     Document Type: Article

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