Effect of annealing temperature on dielectric relaxation and raman scattering of 0.65Pb(Mg1/3Nb2/3)O3-0. 35PbTiO3 system

Journal of the American Ceramic Society

Volumn 93, Issue 9, 2010, Pages 2748-2754

  Hou, Yudong ^a   Wu, Ningning ^a   Wang, Chao ^a   Zhu, Mankang ^a   Song, Xuemei ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; B-SITE CATIONS; DIELECTRIC CONSTANTS; FERROELECTRIC RESPONSE; HIGHER TEMPERATURES; HOMOGENEOUS DISTRIBUTION; INTERNAL STRESS; P-E HYSTERESIS LOOPS; PEROVSKITE STRUCTURES; POLAR NANOREGIONS; PYROCHLORE PHASE; RAMAN SPECTRA; RELATIVE INTENSITY; RELAXOR BEHAVIOR;

ANNEALING; HYSTERESIS; LEAD OXIDE; PEROVSKITE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

PHASE TRANSITIONS;

EID: 77956367440     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.03785.x     Document Type: Article

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