Low-frequency noise in diamond solution-gated field effect transistors

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Hauf, M V ^a   Hess, L H ^a   Howgate, J ^a   Dankerl, M ^a   Stutzmann, M ^a   Garrido, J A ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DE-TRAPPING; DIAMOND CRYSTALS; ELECTRONIC NOISE; GATE VOLTAGES; HOOGE PARAMETERS; HOOGE'S EMPIRICAL RELATION; LOW-FREQUENCY NOISE; SOURCE OF NOISE;

CHARGE CARRIERS; DIAMONDS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 77956355702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483769     Document Type: Article

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