Temperature-dependent photoconductivity in Β -In2 S 3 single crystals

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Ho, C H ^a,b   Wang, Y P ^a   Chan, C H ^a   Huang, Y S ^a   Li, C H ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE LUMINESCENCE; BAND EDGE TRANSITION; BAND GAPS; CONDUCTION BAND EDGE; DEFECT EMISSION; DEFECT STATE; ENERGY ABSORPTION MATERIALS; EXPERIMENTAL ANALYSIS; NEAR BAND EDGE; PC SPECTRA; PHOTOLUMINESCENCE MEASUREMENTS; PL SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TETRAGONAL CRYSTALS; THERMOREFLECTANCE; TRANSITION FEATURES;

DEFECTS; ELECTRON MOBILITY; PHOTOCONDUCTIVITY; SOLAR ENERGY;

SINGLE CRYSTALS;

EID: 77956304163     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3478719     Document Type: Conference Paper

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