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Volumn 39, Issue 9, 2010, Pages 1476-1481

Synthesis and electronic properties of the misfit layer compound [(PbSe) 1.00] 1[MoSe 2] 1

(6) Heideman, Colby L a Rostek, Raimar b Anderson, Michael D a,c Herzing, Andrew A c Anderson, Ian M c Johnson, David C a

a UNIVERSITY OF OREGON (United States)

b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM (Germany)

c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

carrier properties; Misfit layered compounds; thermoelectrics; thin films

Indexed keywords

BASIC STRUCTURE; BI-LAYER; CARRIER PROPERTIES; CONTROLLED ATMOSPHERE; ELECTRICAL PROPERTY; HIGH-ANGLE ANNULAR DARK-FIELD IMAGES; LATTICE PARAMETERS; LOW CONDUCTIVITY; MISFIT-LAYER COMPOUNDS; MISFIT-LAYERED COMPOUND; N-DOPED SEMICONDUCTOR; ORDER OF MAGNITUDE; RESISTIVITY VALUES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; THERMOELECTRICS; TRILAYERS; VOLUME DEFECTS;

DEFECTS; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; HOLOGRAPHIC INTERFEROMETRY; SELENIUM; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77956228661 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1303-4 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.