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Journal of Electronic Materials

Volumn 39, Issue 9, 2010, Pages 1730-1734

Molecular dynamics simulation of mechanical properties of single-crystal bismuth telluride nanowire

(4) Tong, Y a Yi, F J a Liu, L S a Zhang, Q J a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

bismuth telluride; Molecular dynamics; nanowire; strain rate

Indexed keywords

ATOMIC REARRANGEMENTS; BISMUTH TELLURIDE; EFFECT OF STRAIN; FAILURE BEHAVIORS; FAILURE STRAIN; FAILURE STRESS; LOW TEMPERATURES; MECHANICAL BEHAVIOR; MOLECULAR DYNAMICS METHODS; MOLECULAR DYNAMICS SIMULATIONS; PRINCIPAL AXES; SIMULATION RESULT; SURFACE STRESS; TWO DIRECTIONS;

BISMUTH; DYNAMICS; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS; NANOWIRES; STRESS-STRAIN CURVES; STRESSES; TELLURIUM COMPOUNDS;

STRAIN RATE;

EID: 77956226710 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1204-6 Document Type: Article

Times cited : (15)

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