Charge-compensated n-type skutterudites

Journal of Electronic Materials

Volumn 39, Issue 9, 2010, Pages 2122-2126

  Uher, Ctirad ^a   Li, Chang Peng ^a   Ballikaya, Sedat ^a,b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b ISTANBUL UNIVERSITY   (Turkey)

Author keywords

charge compensation; Skutterudites; thermoelectric figure of merit

Indexed keywords

CHARGE COMPENSATION; SKUTTERUDITE COMPOUNDS; SKUTTERUDITES; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

BARIUM; SINTERING; YTTERBIUM;

THERMOELECTRIC EQUIPMENT;

EID: 77956225930     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0990-1     Document Type: Article

References (18)

1. See, e.g., Thermoelectric Handbook, Macro to Nano, ed. D.M. Rowe (CRC Press, Taylor& Francis, 2006).
2. BC Sales D Mandrus RK Williams 1996 Science 272 1325 1:CAS:528: DyaK28Xjt1Okurw%3D 10.1126/science.272.5266.1325 1996Sci...272.1325S 8662465
3. C. Uher, Recent Trends in Thermoelectric Materials Research I, Semiconductors and Semimetals, Vol. 69, ed. T.M. Tritt (San Diego: Academic Press, 2001), pp. 139-253.
4. T Caillat A Borshchevsky J-P Fleurial 1996 J. Appl. Phys. 80 4442 1:CAS:528:DyaK28Xmt1egurc%3D 10.1063/1.363405 1996JAP....80.4442C
5. MS Toprak Ch Stiewe D Platzek S Williams L Bertini E Müller C Gatti Y Zhang M Rowe M Muhammed 2004 Adv. Funct. Mater. 14 1189 1:CAS:528: DC%2BD2MXlvV2rsg%3D%3D 10.1002/adfm.200400109
6. G.A. Slack, CRC Handbook of Thermoelectricity, ed. D.M. Rowe (Boca Raton: CRC Press, 1995), p. 407.
7. W Jeitschko DJ Brown 1977 Acta Crystallogr. B 33 3401 10.1107/S056774087701108X
8. DT Morelli GP Meisner 1995 J. Appl. Phys. 77 3777 1:CAS:528: DyaK2MXltVSms78%3D 10.1063/1.358552 1995JAP....77.3777M
9. LD Chen T Kawahara XF Tang T Goto T Hirai JS Dyck W Chen C Uher 2001 J. Appl. Phys. 90 1864 1:CAS:528:DC%2BD3MXls1OqsbY%3D 10.1063/1.1388162 2001JAP....90.1864C
10. J Yang W Zhang SQ Bai Z Mei LD Chen 2007 Appl. Phys. Lett. 90 192111 10.1063/1.2737422 2007ApPhL..90s2111Y
11. X Shi H Kong C-P Li C Uher J Yang JR Salvador H Wang LD Chen W Zhang 2008 Appl. Phys. Lett. 92 182101 10.1063/1.2920210 2008ApPhL..92r2101S
12. P Feschotte D Lorin 1989 J. Less-Common Met. 155 255 1:CAS:528: DyaK3cXhtVGqu7g%3D 10.1016/0022-5088(89)90235-X
13. H Li X Tang Q Zhang C Uher 2008 Appl. Phys. Lett. 93 252109 10.1063/1.3054158 2008ApPhL..93y2109L
14. H Li X Tang Q Zhang C Uher 2009 Appl. Phys. Lett. 94 102114 10.1063/1.3099804 2009ApPhL..94j2114L
15. GS Nolas GA Slack DT Morelli TM Tritt AC Ehrlich 1996 J. Appl. Phys. 79 4002 1:CAS:528:DyaK28Xis1GktLs%3D 10.1063/1.361828 1996JAP....79.4002N
16. GP Meisner DT Morelli S Hu J Yang C Uher 1998 Phys. Rev. Lett. 80 3551 1:CAS:528:DyaK1cXisVGksbw%3D 10.1103/PhysRevLett.80.3551 1998PhRvL..80.3551M
17. GS Nolas M Kaeser RT Littleton TM Tritt 2000 Appl. Phys. Lett. 77 1855 1:CAS:528:DC%2BD3cXmsV2qtrw%3D 10.1063/1.1311597 2000ApPhL..77.1855N
18. JR Salvador J Yang X Shi H Wang AA Wereszczak H Kong C Uher 2009 Phil. Mag. 89 1517 1:CAS:528:DC%2BD1MXhtVWns73I 10.1080/14786430903019099 2009PMag...89.1517S