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Volumn 39, Issue 9, 2010, Pages 1996-2001
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Thermoelectric efficiency of a quantum dot in the single-electron transistor configuration
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Author keywords
electron phonon coupling; quantum dot; single electron transistor; Thermoelectric efficiency
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Indexed keywords
DOMINANT MECHANISM;
ELECTRON PHONON COUPLINGS;
ENERGY LEVEL;
FIGURE OF MERIT;
PHONON SPECTRUM;
POWER FACTORS;
QUANTUM DOT;
QUANTUM DOTS;
QUANTUM REGIMES;
SEQUENTIAL TUNNELING;
SINGLE ELECTRON;
THERMOELECTRIC EFFICIENCY;
TRANSPORT COEFFICIENT;
CAPACITANCE MEASUREMENT;
CONVERSION EFFICIENCY;
ELECTRIC POWER FACTOR;
ELECTRON CORRELATIONS;
ELECTRON-PHONON INTERACTIONS;
ELECTRONS;
ENERGY CONVERSION;
QUANTUM CHEMISTRY;
QUANTUM CONFINEMENT;
SEMICONDUCTOR QUANTUM DOTS;
SINGLE ELECTRON TRANSISTORS;
QUANTUM EFFICIENCY;
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EID: 77956225838
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-009-1033-7 Document Type: Article |
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Times cited : (7)
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References (14)
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