Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Xiang, P H ^a,b   Asanuma, S ^a,b   Yamada, H ^a   Inoue, I H ^a,b   Akoh, H ^a,b   Sawa, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC ORDERINGS; CA-DOPED; ELECTRONIC PHASE DIAGRAM; ELECTRONIC TRANSPORT PROPERTIES; INSULATING PHASE; MATRIX; METAL INSULATORS; METALLIC CONDUCTIVITY; PULSED LASER; ROOM TEMPERATURE; STRONG ELECTRON CORRELATIONS; SUB-LATTICES; SYSTEMATIC CONTROL;

ANTIFERROMAGNETISM; CALCIUM; DOPING (ADDITIVES); EPITAXIAL GROWTH; METAL INSULATOR BOUNDARIES; PHASE DIAGRAMS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

METAL INSULATOR TRANSITION;

EID: 77956210295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467199     Document Type: Article

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