Growth and electronic properties of GaN/ZnO solid solution nanowires

Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

  Han, Wei Qiang ^a   Zhang, Yan ^b   Nam, Chang Yong ^a   Black, C T ^a   Mendez, E E ^a,b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CHARGE TRAP; CHEMICAL DISORDER; ELECTRICAL TRANSPORT MEASUREMENTS; ENERGY BANDGAPS; INCIDENT LIGHT; NANO-STRUCTURED; PHOTOCURRENT RESPONSE; PHOTORESPONSES; SOL-GEL METHODS; ZNO;

ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; GELS; NANOWIRES; SOL-GEL PROCESS; SOLID SOLUTIONS; ZINC; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 77956192478     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483132     Document Type: Article

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