In/extrinsic granularity in superconducting boron-doped diamond

Physica C: Superconductivity and its Applications

Volumn 470, Issue 19, 2010, Pages 853-856

  Willems, B L ^a,b   Zhang, G ^a   Vanacken, J ^a   Moshchalkov, V V ^a   Guillamon, I ^c   Suderow, H ^c   Vieira, S ^c   Janssens, S D ^d   Haenen, K ^d   Wagner, P ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSIDAD NACIONAL MAYOR DE SAN MARCOS   (Peru)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d HASSELT UNIVERSITY   (Belgium)

Author keywords

Boron doped diamond films; Granular films; Superconductor insulator transition

Indexed keywords

BORON DOPED DIAMOND; BORON-DOPED DIAMOND FILMS; BORON-DOPING; CHEMICAL DOPING; COOPER-PAIR TUNNELING; GRANULAR EFFECTS; GRANULAR FILM; GROWTH METHOD; INSULATOR-TO-METAL TRANSITIONS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; NANO DIAMOND; NEGATIVE MAGNETO-RESISTANCE; NUCLEATION CENTER; OFFSET TEMPERATURE; ORDER PARAMETER; QUASI PARTICLES; SUPERCONDUCTING FLUCTUATIONS; SUPERCONDUCTOR INSULATOR TRANSITIONS;

BORON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIAMONDS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; FILM GROWTH; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; METAL INSULATOR TRANSITION; PLASMA DEPOSITION; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; THIN FILMS; TRANSPORT PROPERTIES;

DIAMOND FILMS;

EID: 77956179108     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physc.2010.02.080     Document Type: Conference Paper

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