Control of Si crystal growth during solidification of Si-Al melt

Materials Transactions

Volumn 51, Issue 7, 2010, Pages 1227-1230

  Nishi, Yuki ^a   Kang, Youngjo ^a   Morita, Kazuki ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Crystal growth; Directional solidification; Silicon refining; Silicon aluminum melt; Solar cell grade silicon

Indexed keywords

AL CONTENT; DIRECTIONAL SOLIDIFICATION; GROWTH CONDITIONS; IMPURITY ELEMENT; LIQUIDUS TEMPERATURE; REFINING PROCESS; SI CRYSTALS; SI-AL ALLOYS; SI-AL MELT; SILICON REFINING; SILICON-ALUMINUM MELT; SOLID SOLUBILITIES;

ALUMINUM; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; REFINING; SILICON; SOLAR CELLS; SOLIDIFICATION;

SILICON ALLOYS;

EID: 77956165275     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.M2010001     Document Type: Article

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