Simulation and measurements of stray minority carrier protection structures in CMOS image sensors

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2213-2220

  Lin, Dong Long ^a   Wang, Ching Chun ^a,b   Wei, Chia Ling ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

CMOS image sensor; N diffusion guard ring; N well guard ring

Indexed keywords

CMOS IMAGE SENSOR; CMOS TECHNOLOGY; DIGITAL PIXEL; GUARD-RINGS; IMAGER DESIGN; MINORITY CARRIER; N-DIFFUSION GUARD RING; N-WELL GUARD RING; NOISE SOURCE; OPERATING FREQUENCY; PERIPHERY CIRCUITS; PIXEL ARRAYS; PIXEL NOISE; PROCESS TECHNOLOGIES; PROTECTION STRUCTURE; RAPID GROWTH; SIMULATION AND MEASUREMENT;

ACOUSTIC NOISE; CMOS INTEGRATED CIRCUITS; DIFFUSION; DIGITAL CAMERAS; IMAGE QUALITY; IMAGE SENSORS;

PIXELS;

EID: 77956055779     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2055275     Document Type: Article

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