Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2176-2182

  Webster, Eric A G ^a   Nicol, Robert L ^b   Grant, Lindsay ^b   Renshaw, David ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b STMICROELECTRONICS   (Italy)

Author keywords

Dark current; image sensors; noise; traps

Indexed keywords

ARRHENIUS; BAND GAPS; CMOS IMAGE SENSOR; CMOS IMAGERS; CROSS SECTION; DARK CURRENT MEASUREMENTS; DEEP LEVEL; E-CENTER; ENHANCED EMISSION; EXPERIMENTAL TECHNIQUES; FREQUENCY FACTORS; GEOMETRIC RELATIONSHIPS; INTEGRATION TIME; MEASUREMENT TIME; MEYER-NELDEL RELATIONSHIPS; NOISE; PHYSICAL PROCESS; POOLE-FRENKEL; SPECTROSCOPY MEASUREMENTS; TRAP LEVELS; TRAPS;

DARK CURRENTS; ELECTRIC FIELDS; IMAGE SENSORS; MOLYBDENUM; PHOSPHORUS; PIXELS; STATISTICAL MECHANICS; TUNGSTEN;

ACTIVATION ENERGY;

EID: 77956044820     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2052399     Document Type: Article

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